All MOSFET. FQP4N25 Datasheet

 

FQP4N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQP4N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: TO-220

 FQP4N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP4N25 Datasheet (PDF)

 ..1. Size:710K  fairchild semi
 fqp4n25.pdf

FQP4N25 FQP4N25

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been e

 8.1. Size:677K  fairchild semi
 fqp4n20.pdf

FQP4N25 FQP4N25

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

 8.2. Size:902K  fairchild semi
 fqp4n20l.pdf

FQP4N25 FQP4N25

October 2013FQP4N20LN-Channel QFET MOSFET200 V, 3.8 A, 1.35 Description FeaturesThese N-Channel enhancement mode power field effect 3.8 A, 200 V, RDS(on) = 1.35 (Max.) @ VGS = 10 V, ID = 1.9 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology is especially tailored

 8.3. Size:1067K  onsemi
 fqp4n20l.pdf

FQP4N25 FQP4N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:3178K  cn vbsemi
 fqp4n20.pdf

FQP4N25 FQP4N25

FQP4N20www.VBsemi.twN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DGG

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HAT2040R

 

 
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