FQP4P25 Specs and Replacement
Type Designator: FQP4P25
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-220
FQP4P25 substitution
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FQP4P25 datasheet
fqp4p25.pdf
December 2000 TM QFET QFET QFET QFET FQP4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is e... See More ⇒
fqp4p40.pdf
August 2000 TM QFET QFET QFET QFET FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been... See More ⇒
fqp4p40.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQP3N90, FQP44N08, FQP44N10F, FQP4N20, FQP4N25, FQP4N50, FQP4N60, FQP4N90, IRFB4227, FQP55N06, FQP58N08, FQP5N20, FQP5N20L, FQP5N30, FQP5N40, FQP5N50C, FQP5N80
Keywords - FQP4P25 MOSFET specs
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