IRF4104PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF4104PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-220AB
IRF4104PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF4104PBF Datasheet (PDF)
irf4104lpbf irf4104pbf irf4104spbf.pdf
PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf4104pbf irf4104spbf irf4104lpbf.pdf
PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
irf4104l.pdf
PD - 94639AIRF4104AUTOMOTIVE MOSFETIRF4104SIRF4104LFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET
auirf4104strl.pdf
PD - 97471AAUTOMOTIVE GRADEAUIRF4104AUIRF4104SFeatures Low On-ResistanceHEXFET Power MOSFET Dynamic dV/dT Rating 175C Operating TemperatureD V(BR)DSS40V Fast SwitchingRDS(on) typ.4.3m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mG Lead-Free, RoHS CompliantID (Silicon Limited)120A Automotive Qualified *SID (Package Li
auirf4104 auirf4104s.pdf
AUIRF4104 AUTOMOTIVE GRADE AUIRF4104S Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 4.3m 175C Operating Temperature Fast Switching max. 5.5m Fully Avalanche Rated ID (Silicon Limited) 120A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A L
irf4104s.pdf
Isc N-Channel MOSFET Transistor IRF4104SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irf4104.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF4104IIRF4104FEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DMG8880LSS
History: DMG8880LSS
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