All MOSFET. IRF540ZPBF Datasheet

 

IRF540ZPBF Datasheet and Replacement


   Type Designator: IRF540ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0265 Ohm
   Package: TO-220AB
 

 IRF540ZPBF substitution

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IRF540ZPBF Datasheet (PDF)

 ..1. Size:302K  international rectifier
 irf540zpbf.pdf pdf_icon

IRF540ZPBF

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 6.1. Size:2107K  cn vbsemi
 irf540zp.pdf pdf_icon

IRF540ZPBF

IRF540ZPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA

 7.1. Size:326K  international rectifier
 auirf540zstrl.pdf pdf_icon

IRF540ZPBF

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

 7.2. Size:173K  international rectifier
 irf540z.pdf pdf_icon

IRF540ZPBF

PD - 94644IRF540ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 29.5m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 34ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes t

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Datasheet: IRF530NSPBF , IRF530S , IRF540NLPBF , IRF540NPBF , IRF540NSPBF , IRF540S , IRF540SPBF , IRF540ZLPBF , IRFZ46N , IRF540ZSPBF , IRF5800 , IRF5801PBF-1 , IRF5803D2PBF , IRF5804 , IRF5805PBF , IRF5806PBF , IRF5EA1310 .

Keywords - IRF540ZPBF MOSFET datasheet

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