IRFZ12 Datasheet. Specs and Replacement
Type Designator: IRFZ12 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
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IRFZ12 datasheet
9.2. Size:875K international rectifier
irfz14pbf.pdf 
PD - 94959 IRFZ14PbF Lead-Free www.irf.com 1 01/29/04 IRFZ14PbF 2 www.irf.com IRFZ14PbF www.irf.com 3 IRFZ14PbF 4 www.irf.com IRFZ14PbF www.irf.com 5 IRFZ14PbF 6 www.irf.com IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -... See More ⇒
9.3. Size:234K international rectifier
irfz14s.pdf
PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒
9.4. Size:185K international rectifier
irfz14s-l.pdf
PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒
9.6. Size:373K international rectifier
irfz10.pdf
PD - 90440A IRFZ10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number 90363 www.vishay.com 1 IRFZ10 Document Number 90363 www.vishay.com 2 IRFZ10 Document Number 90363 www.vishay.com 3 IRFZ10 Document Number 90363 www.vishay.com 4 IRFZ10 Document Number 90363 www.vishay.com 5 IRFZ10 Document Number 90363 www.vishay.com 6 IRFZ10 Peak Diode Rec... See More ⇒
9.7. Size:435K samsung
irfz14a.pdf
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings... See More ⇒
9.8. Size:333K vishay
irfz14s irfz14l sihfz14s sihfz14l.pdf
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw... See More ⇒
9.9. Size:324K vishay
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw... See More ⇒
9.10. Size:1583K vishay
irfz14 sihfz14.pdf
IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching Qg (Max.) (nC) 11 COMPLIANT Ease of Paralleling Qgs (nC) 3.1 Qgd (nC) 5.8 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
9.11. Size:1167K vishay
irfz10 sihfz10.pdf
IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 11 Ease of Paralleling Qgs (nC) 3.1 Simple Drive Requirements Qgd (nC) 5.8 Compliant to RoHS Directive 2002/95/EC Configuration Single ... See More ⇒
9.12. Size:376K vishay
irfz14s sihfz14s sihfz14l.pdf
IRFZ14S, SiHFZ14S, SiHFZ14L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S) I2PAK (TO-262) D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switching Available G Material categorization for definitions of compliance please see www.vishay.c... See More ⇒
9.13. Size:288K vishay
irfz10pbf sihfz10.pdf
IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 11 Ease of Paralleling Qgs (nC) 3.1 Simple Drive Requirements Qgd (nC) 5.8 Compliant to RoHS Directive 2002/95/EC Configuration Single ... See More ⇒
Detailed specifications: IRFY9120C, IRFY9130, IRFY9130C, IRFY9140, IRFY9140C, IRFY9240, IRFY9240C, IRFZ10, 20N50, IRFZ14, IRFZ14A, IRFZ15, IRFZ20, IRFZ22, IRFZ24, IRFZ24A, IRFZ24N
Keywords - IRFZ12 MOSFET specs
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