IRF5Y3315CM Specs and Replacement

Type Designator: IRF5Y3315CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-257AA

IRF5Y3315CM substitution

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IRF5Y3315CM datasheet

 ..1. Size:104K  international rectifier
 irf5y3315cm.pdf pdf_icon

IRF5Y3315CM

PD - 94268 HEXFET POWER MOSFET IRF5Y3315CM THRU-HOLE (TO-257AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒

 8.1. Size:103K  international rectifier
 irf5y3205cm.pdf pdf_icon

IRF5Y3315CM

PD - 94179A HEXFET POWER MOSFET IRF5Y3205CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55V Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features... See More ⇒

 8.2. Size:97K  international rectifier
 irf5y31n20.pdf pdf_icon

IRF5Y3315CM

PD - 94349A HEXFET POWER MOSFET IRF5Y31N20 THRU-HOLE (TO-257AA) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the... See More ⇒

 8.3. Size:103K  international rectifier
 irf5y3710cm.pdf pdf_icon

IRF5Y3315CM

PD - 94178 HEXFET POWER MOSFET IRF5Y3710CM THRU-HOLE (TO-257AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A* Fifth Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features ... See More ⇒

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Detailed specifications: IRF5NJ5305, IRF5NJ540, IRF5NJ6215, IRF5NJ9540, IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, IRF5Y31N20, AOD4184A, IRF5Y3710CM, IRF5Y5305CM, IRF5Y540CM, IRF5Y6215CM, IRF5Y9540CM, IRF5YZ48CM, IRF6100, IRF6100PBF

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