All MOSFET. IRF5Y3315CM Datasheet

 

IRF5Y3315CM Datasheet and Replacement


   Type Designator: IRF5Y3315CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-257AA
 

 IRF5Y3315CM substitution

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IRF5Y3315CM Datasheet (PDF)

 ..1. Size:104K  international rectifier
 irf5y3315cm.pdf pdf_icon

IRF5Y3315CM

PD - 94268HEXFET POWER MOSFET IRF5Y3315CMTHRU-HOLE (TO-257AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

 8.1. Size:103K  international rectifier
 irf5y3205cm.pdf pdf_icon

IRF5Y3315CM

PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features

 8.2. Size:97K  international rectifier
 irf5y31n20.pdf pdf_icon

IRF5Y3315CM

PD - 94349AHEXFET POWER MOSFET IRF5Y31N20THRU-HOLE (TO-257AA)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 8.3. Size:103K  international rectifier
 irf5y3710cm.pdf pdf_icon

IRF5Y3315CM

PD - 94178HEXFET POWER MOSFET IRF5Y3710CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

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Datasheet: IRF5NJ5305 , IRF5NJ540 , IRF5NJ6215 , IRF5NJ9540 , IRF5NJZ34 , IRF5NJZ48 , IRF5Y1310CM , IRF5Y31N20 , HY1906P , IRF5Y3710CM , IRF5Y5305CM , IRF5Y540CM , IRF5Y6215CM , IRF5Y9540CM , IRF5YZ48CM , IRF6100 , IRF6100PBF .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - IRF5Y3315CM MOSFET datasheet

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