All MOSFET. IRF5Y540CM Datasheet

 

IRF5Y540CM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF5Y540CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO-257AA

 IRF5Y540CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF5Y540CM Datasheet (PDF)

 ..1. Size:97K  international rectifier
 irf5y540cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94017BHEXFET POWER MOSFET IRF5Y540CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

 8.1. Size:106K  international rectifier
 irf5y5305cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94028HEXFET POWER MOSFET IRF5Y5305CMTHRU-HOLE (TO-257AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures

 9.1. Size:103K  international rectifier
 irf5y3205cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features

 9.2. Size:159K  international rectifier
 irf5y6215cm.pdf

IRF5Y540CM IRF5Y540CM

PD-94165AHEXFET POWER MOSFET IRF5Y6215CMTHRU-HOLE (TO-257AA)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

 9.3. Size:105K  international rectifier
 irf5y1310cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94058HEXFET POWER MOSFET IRF5Y1310CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

 9.4. Size:97K  international rectifier
 irf5y31n20.pdf

IRF5Y540CM IRF5Y540CM

PD - 94349AHEXFET POWER MOSFET IRF5Y31N20THRU-HOLE (TO-257AA)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 9.5. Size:103K  international rectifier
 irf5y9540cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94027AHEXFET POWER MOSFET IRF5Y9540CMTHRU-HOLE (TO-257AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatur

 9.6. Size:103K  international rectifier
 irf5y3710cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94178HEXFET POWER MOSFET IRF5Y3710CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

 9.7. Size:104K  international rectifier
 irf5yz48cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94019AHEXFET POWER MOSFET IRF5YZ48CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

 9.8. Size:104K  international rectifier
 irf5y3315cm.pdf

IRF5Y540CM IRF5Y540CM

PD - 94268HEXFET POWER MOSFET IRF5Y3315CMTHRU-HOLE (TO-257AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP5N30FI

 

 
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