IRF610PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF610PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.2
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO-220AB
IRF610PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF610PBF
Datasheet (PDF)
..1. Size:202K international rectifier
irf610pbf.pdf 
IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
7.1. Size:2973K cn vbsemi
irf610p.pdf
IRF610Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DGG
8.4. Size:618K international rectifier
irf6100pbf.pdf
PD - 96012BIRF6100PbFHEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (
8.5. Size:199K international rectifier
irf610spbf.pdf
IRF610S, SiHF610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of Paralleling Simple Drive R
8.6. Size:636K international rectifier
irf6100.pdf
PD - 93930FIRF6100HEXFET Power MOSFETl Ultra Low RDS(on) per Footprint AreaVDSS RDS(on) max IDl Low Thermal Resistance-20V 0.065@VGS = -4.5V -5.1Al P-Channel MOSFET0.095@VGS = -2.5V -4.1Al One-third Footprint of SOT-23l Super Low Profile (
8.7. Size:173K international rectifier
irf610l irf610lpbf.pdf
IRF610S, SiHF610S, IRF610L, SiHF610Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Available in tape and reelRDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 8.2 Repetitive avalanche ratedQgs (nC) 1.8 Fast switchingAvailableQgd (nC) 4.5 Ease of parallelingConfiguration Sing
8.8. Size:866K fairchild semi
irf610b.pdf
IRF610B/IRFS610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fast switch
8.10. Size:930K samsung
irf610a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
8.11. Size:202K vishay
irf610 sihf610.pdf
IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
8.12. Size:175K vishay
irf610s sihf610s irf610l sihf610l.pdf
IRF610S, SiHF610S, IRF610L, SiHF610Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Available in tape and reelRDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 8.2 Repetitive avalanche ratedQgs (nC) 1.8 Fast switchingAvailableQgd (nC) 4.5 Ease of parallelingConfiguration Sing
Datasheet: IRF5Y540CM
, IRF5Y6215CM
, IRF5Y9540CM
, IRF5YZ48CM
, IRF6100
, IRF6100PBF
, IRF610L
, IRF610LPBF
, IRF540
, IRF610SPBF
, IRF614PBF
, IRF614SPBF
, IRF6201PBF
, IRF620B
, IRF620PBF
, IRF620SPBF
, IRF6215LPBF
.
