IRF6201PBF Specs and Replacement

Type Designator: IRF6201PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1735 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00245 Ohm

Package: SO-8

IRF6201PBF substitution

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IRF6201PBF datasheet

 ..1. Size:247K  international rectifier
irf6201pbf.pdf pdf_icon

IRF6201PBF

PD - 97500A IRF6201PbF HEXFET Power MOSFET VDS 20 V RDS(on) max 2.45 m (@VGS = 4.5V) RDS(on) max 2.75 m (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25 C) Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low RDSon ( 2.45m @ Vgs = 4.5V) Lower ... See More ⇒

 8.1. Size:881K  1
irf620b irfs620b.pdf pdf_icon

IRF6201PBF

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 8.2. Size:182K  international rectifier
irf620s.pdf pdf_icon

IRF6201PBF

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 8.3. Size:162K  international rectifier
irf620spbf.pdf pdf_icon

IRF6201PBF

IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio... See More ⇒

Detailed specifications: IRF6100, IRF6100PBF, IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF, IRF614PBF, IRF614SPBF, IRFZ44, IRF620B, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, FQP6P25

Keywords - IRF6201PBF MOSFET specs

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