IRF620PBF Specs and Replacement

Type Designator: IRF620PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220AB

IRF620PBF substitution

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IRF620PBF datasheet

 ..1. Size:202K  international rectifier
irf620pbf.pdf pdf_icon

IRF620PBF

IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

 8.1. Size:881K  1
irf620b irfs620b.pdf pdf_icon

IRF620PBF

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 8.2. Size:182K  international rectifier
irf620s.pdf pdf_icon

IRF620PBF

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 8.3. Size:162K  international rectifier
irf620spbf.pdf pdf_icon

IRF620PBF

IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio... See More ⇒

Detailed specifications: IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF, IRF614PBF, IRF614SPBF, IRF6201PBF, IRF620B, IRF1404, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, FQP6P25, FQP70N08, FQP7N10

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.