All MOSFET. FQP6N90 Datasheet

 

FQP6N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP6N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO-220

FQP6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP6N90 Datasheet (PDF)

1.1. fqp6n90.pdf Size:765K _fairchild_semi

FQP6N90
FQP6N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

1.2. fqp6n90c fqpf6n90c.pdf Size:860K _fairchild_semi

FQP6N90
FQP6N90

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switch

 5.1. fqp6n60c.pdf Size:931K _fairchild_semi

FQP6N90
FQP6N90

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

5.2. fqp6n15.pdf Size:743K _fairchild_semi

FQP6N90
FQP6N90

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.6 pF) This advanced technology has been es

 5.3. fqp6n60c fqpf6n60c.pdf Size:931K _fairchild_semi

FQP6N90
FQP6N90

QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to Fast switch

5.4. fqp6n25.pdf Size:717K _fairchild_semi

FQP6N90
FQP6N90

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.5A, 250V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been es

 5.5. fqp6n40c fqpf6n40c.pdf Size:851K _fairchild_semi

FQP6N90
FQP6N90

TM QFET FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

5.6. fqp6n70.pdf Size:763K _fairchild_semi

FQP6N90
FQP6N90

April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.2A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has bee

5.7. fqp6n50.pdf Size:736K _fairchild_semi

FQP6N90
FQP6N90

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 17 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been e

5.8. fqp6n80.pdf Size:672K _fairchild_semi

FQP6N90
FQP6N90

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailo

5.9. fqp6n60.pdf Size:534K _fairchild_semi

FQP6N90
FQP6N90

April 2000 TM QFET QFET QFET QFET FQP6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been esp

5.10. fqp6n40cf fqpf6n40cf.pdf Size:1088K _fairchild_semi

FQP6N90
FQP6N90

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description 6A, 400V, RDS(on) = 1.1 ? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 15pF) mi

5.11. fqp6n80c fqpf6n80c.pdf Size:889K _fairchild_semi

FQP6N90
FQP6N90

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to Fast switc

5.12. fqp6n50c.pdf Size:658K _fairchild_semi

FQP6N90
FQP6N90

® QFET FQP6N50C 500V N-Channel MOSFET Features Description • 5.5 A, 500 V, RDS(on) = 1.2 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 19 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 15 pF) minimize

Datasheet: IRF614SPBF , IRF6201PBF , IRF620B , IRF620PBF , IRF620SPBF , IRF6215LPBF , IRF6215PBF , IRF6215SPBF , IRFZ34N , FQP6P25 , FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 .

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