FQP7N20L PDF and Equivalents Search

 ..1. Size:557K  fairchild semi
 fqp7n20l.pdf

December 2000 TM QFET QFET QFET QFET FQP7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology... See More ⇒

 7.1. Size:664K  fairchild semi
 fqp7n20.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been... See More ⇒

 7.2. Size:664K  onsemi
 fqp7n20.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been... See More ⇒

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.2. Size:536K  fairchild semi
 fqp7n10.pdf

December 2000 TM QFET QFET QFET QFET FQP7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is espe... See More ⇒

 9.3. Size:579K  fairchild semi
 fqp7n60.pdf

April 2000 TM QFET QFET QFET QFET FQP7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been esp... See More ⇒

 9.4. Size:544K  fairchild semi
 fqp7n10l.pdf

December 2000 TM QFET QFET QFET QFET FQP7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology ... See More ⇒

 9.5. Size:885K  fairchild semi
 fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.6. Size:752K  fairchild semi
 fqp7n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 400V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been e... See More ⇒

 9.7. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to... See More ⇒

 9.8. Size:798K  fairchild semi
 fqp7n80.pdf

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been es... See More ⇒

 9.9. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to... See More ⇒