All MOSFET. FQP9N15 Datasheet

 

FQP9N15 Datasheet and Replacement


   Type Designator: FQP9N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
 

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FQP9N15 Datasheet (PDF)

 ..1. Size:757K  fairchild semi
fqp9n15.pdf pdf_icon

FQP9N15

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been espe

 9.1. Size:1341K  fairchild semi
fqp9n50c.pdf pdf_icon

FQP9N15

April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim

 9.2. Size:540K  fairchild semi
fqp9n08l.pdf pdf_icon

FQP9N15

December 2000TMQFETQFETQFETQFETFQP9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology is

 9.3. Size:1136K  fairchild semi
fqp9n25c fqpf9n25c.pdf pdf_icon

FQP9N15

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

Datasheet: FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 , FQP9N08 , FQP9N08L , 12N60 , FQP9N25C , FQP9N50 , FQPF10N20 , FQPF10N60CF , FQPF10N60CT , FQPF10N60CYDTU , FQPF11N40CT , FQPF11N40T .

History: NCEP10N12K | APM1110K | SI4435DY-T1-E3 | NCEP055N10M | FCMT199N60 | FDMS8020 | IPA60R600P7S

Keywords - FQP9N15 MOSFET datasheet

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