All MOSFET. FQPF10N20 Datasheet

 

FQPF10N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQPF10N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO-220F

 FQPF10N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF10N20 Datasheet (PDF)

 ..1. Size:764K  fairchild semi
 fqpf10n20.pdf

FQPF10N20 FQPF10N20

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has be

 0.1. Size:875K  fairchild semi
 fqp10n20c fqpf10n20c.pdf

FQPF10N20 FQPF10N20

TMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailor

 0.2. Size:821K  onsemi
 fqp10n20c fqpf10n20c.pdf

FQPF10N20 FQPF10N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.3. Size:201K  inchange semiconductor
 fqpf10n20c.pdf

FQPF10N20 FQPF10N20

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQPF10N20CFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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