FQPF12P20
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQPF12P20
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 7.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 195
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47
Ohm
Package:
TO-220F
FQPF12P20
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF12P20
Datasheet (PDF)
..1. Size:629K fairchild semi
fqpf12p20ydtu fqpf12p20 fqpf12p20xdtu.pdf 
May 2000TMQFETQFETQFETQFETFQPF12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been
7.1. Size:629K fairchild semi
fqpf12p10.pdf
TMQFETFQPF12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to
8.1. Size:469K 1
fqp12n65c fqpf12n65c.pdf
12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des
8.2. Size:549K fairchild semi
fqpf12n60.pdf
April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
8.3. Size:1123K fairchild semi
fqpf12n60c.pdf
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
8.4. Size:803K fairchild semi
fqpf12n60ct.pdf
September 2006 QFETFQPF12N60CT600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21 pF)This advanced technology has been especially tailored
8.5. Size:1170K fairchild semi
fqp12n60c fqpf12n60c.pdf
September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall
8.6. Size:547K fairchild semi
fqpf12n60 fqpf12n60t.pdf
April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
8.7. Size:1123K onsemi
fqpf12n60c.pdf
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
8.8. Size:224K inchange semiconductor
fqpf12n60c.pdf
isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A
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