FQPF27N25T Specs and Replacement

Type Designator: FQPF27N25T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 270 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-220F

FQPF27N25T substitution

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FQPF27N25T datasheet

 ..1. Size:760K  fairchild semi
 fqpf27n25t.pdf pdf_icon

FQPF27N25T

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es... See More ⇒

 5.1. Size:765K  fairchild semi
 fqpf27n25.pdf pdf_icon

FQPF27N25T

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es... See More ⇒

 5.2. Size:550K  onsemi
 fqpf27n25.pdf pdf_icon

FQPF27N25T

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:674K  fairchild semi
 fqpf27p06.pdf pdf_icon

FQPF27N25T

May 2001 TM QFET FQPF27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored... See More ⇒

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Detailed specifications: FQPF18N50V2, FQPF19N10L, FQPF19N20CYDTU, FQPF19N20T, FQPF1N50, FQPF1N60, FQPF1N60T, FQPF1P50, IRF2807, FQPF28N15, FQPF28N15T, FQPF2N30, FQPF2N40, FQPF2N50, FQPF2N60, FQPF2N90, FQPF2NA90

Keywords - FQPF27N25T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.