FQPF2N50 Specs and Replacement
Type Designator: FQPF2N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ -
Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
FQPF2N50 datasheet
..1. Size:711K fairchild semi
fqpf2n50.pdf 
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.3A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has bee... See More ⇒
8.1. Size:732K fairchild semi
fqpf2n30.pdf
May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been ... See More ⇒
8.2. Size:726K fairchild semi
fqpf2n90.pdf
April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has be... See More ⇒
8.3. Size:1366K fairchild semi
fqp2n60c fqpf2n60c.pdf
April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒
8.4. Size:561K fairchild semi
fqpf2n60.pdf
April 2000 TM QFET QFET QFET QFET FQPF2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been ... See More ⇒
8.5. Size:622K fairchild semi
fqpf2n70.pdf
TM QFET FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fa... See More ⇒
8.6. Size:619K fairchild semi
fqpf2n80.pdf
September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tail... See More ⇒
8.7. Size:677K fairchild semi
fqpf2na90.pdf
September 2000 TM QFET QFET QFET QFET FQPF2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has... See More ⇒
8.8. Size:725K fairchild semi
fqpf2n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has bee... See More ⇒
8.9. Size:966K fairchild semi
fqpf2n80ydtu.pdf
July 2013 FQPF2N80YDTU N-Channel QFET MOSFET 8 0 V, 1.5 A, Features Description This N-Channel enhancement mode power MOSFET is 1.5 A, 8 0 V, RDS(on)= (Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5.5 pF) MOSFET technolog... See More ⇒
8.10. Size:1596K onsemi
fqp2n60c fqpf2n60c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.11. Size:1344K onsemi
fqpf2n80ydtu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQPF1N60, FQPF1N60T, FQPF1P50, FQPF27N25T, FQPF28N15, FQPF28N15T, FQPF2N30, FQPF2N40, P60NF06, FQPF2N60, FQPF2N90, FQPF2NA90, FQPF2P25, FQPF2P40, FQPF30N06, FQPF32N12V2, FQPF34N20
Keywords - FQPF2N50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
