FQPF3N80CYDTU Datasheet and Replacement
Type Designator: FQPF3N80CYDTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 43.5 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220F
FQPF3N80CYDTU substitution
FQPF3N80CYDTU Datasheet (PDF)
fqpf3n80cydtu.pdf
TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t
fqp3n80c fqpf3n80c.pdf
TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t
fqp3n80c fqpf3n80c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqpf3n80.pdf
September 2000TMQFETFQPF3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tail
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - FQPF3N80CYDTU MOSFET datasheet
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