FQPF3N80CYDTU Specs and Replacement

Type Designator: FQPF3N80CYDTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.5 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220F

FQPF3N80CYDTU substitution

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FQPF3N80CYDTU datasheet

 ..1. Size:808K  fairchild semi
 fqpf3n80cydtu.pdf pdf_icon

FQPF3N80CYDTU

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒

 5.1. Size:810K  fairchild semi
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FQPF3N80CYDTU

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒

 5.2. Size:883K  onsemi
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FQPF3N80CYDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:638K  fairchild semi
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FQPF3N80CYDTU

September 2000 TM QFET FQPF3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tail... See More ⇒

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Detailed specifications: FQPF32N12V2, FQPF34N20, FQPF34N20L, FQPF3N30, FQPF3N40, FQPF3N50C, FQPF3N60, FQPF3N80, EMB04N03H, FQPF3N90, FQPF3P20, FQPF3P50, FQPF44N08, FQPF44N08T, FQPF44N10, FQPF46N15, FQPF47P06YDTU

Keywords - FQPF3N80CYDTU MOSFET specs

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 FQPF3N80CYDTU replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.