All MOSFET. FQPF4N90 Datasheet

 

FQPF4N90 Datasheet and Replacement


   Type Designator: FQPF4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

FQPF4N90 Datasheet (PDF)

 ..1. Size:622K  fairchild semi
 fqpf4n90.pdf pdf_icon

FQPF4N90

October 2001TMQFETFQPF4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been especially

 0.1. Size:899K  fairchild semi
 fqp4n90c fqpf4n90c.pdf pdf_icon

FQPF4N90

TMQFETFQP4N90C/FQPF4N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC)planar stripe, DMOS technology. Low Crss ( typical 5.6 pF)This advanced technology has been especially tailored to

 0.2. Size:1337K  onsemi
 fqp4n90c fqpf4n90c.pdf pdf_icon

FQPF4N90

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:549K  fairchild semi
 fqpf4n60.pdf pdf_icon

FQPF4N90

April 2000TMQFETQFETQFETQFETFQPF4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been e

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - FQPF4N90 MOSFET datasheet

 FQPF4N90 cross reference
 FQPF4N90 equivalent finder
 FQPF4N90 lookup
 FQPF4N90 substitution
 FQPF4N90 replacement

 

 
Back to Top

 


 
.