All MOSFET. FQPF4N90 Datasheet

 

FQPF4N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF4N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm

Package: TO-220F

FQPF4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQPF4N90 Datasheet (PDF)

1.1. fqpf4n90.pdf Size:622K _fairchild_semi

FQPF4N90
FQPF4N90

October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially

1.2. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQPF4N90
FQPF4N90

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

 4.1. fqpf4n50.pdf Size:718K _fairchild_semi

FQPF4N90
FQPF4N90

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

4.2. fqpf4n60.pdf Size:549K _fairchild_semi

FQPF4N90
FQPF4N90

April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been e

 4.3. fqpf4n25.pdf Size:739K _fairchild_semi

FQPF4N90
FQPF4N90

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been

4.4. fqpf4n20.pdf Size:715K _fairchild_semi

FQPF4N90
FQPF4N90

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

 4.5. fqpf4n80.pdf Size:638K _fairchild_semi

FQPF4N90
FQPF4N90

September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.6 pF) This advanced technology has been especially tail

4.6. fqpf4n20l.pdf Size:541K _fairchild_semi

FQPF4N90
FQPF4N90

December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technolog

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
Back to Top