All MOSFET. FQPF5N50CFTU Datasheet

 

FQPF5N50CFTU Datasheet and Replacement


   Type Designator: FQPF5N50CFTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220F
 

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FQPF5N50CFTU Datasheet (PDF)

 ..1. Size:657K  fairchild semi
 fqpf5n50cf fqpf5n50cftu.pdf pdf_icon

FQPF5N50CFTU

TMFRFETFQPF5N50CF 500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini- F

 5.1. Size:879K  fairchild semi
 fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf pdf_icon

FQPF5N50CFTU

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 5.2. Size:979K  onsemi
 fqp5n50c fqpf5n50c.pdf pdf_icon

FQPF5N50CFTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 6.1. Size:750K  fairchild semi
 fqpf5n50.pdf pdf_icon

FQPF5N50CFTU

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been

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Datasheet: FQPF50N06 , FQPF50N06L , FQPF55N10 , FQPF5N15 , FQPF5N20 , FQPF5N20L , FQPF5N30 , FQPF5N50 , IRFB4227 , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , FQPF5N60 , FQPF5N60CYDTU , FQPF5N80 , FQPF5P10 , FQPF6N15 .

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