FQPF8N60CT Specs and Replacement

Type Designator: FQPF8N60CT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

FQPF8N60CT substitution

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FQPF8N60CT datasheet

 ..1. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf pdf_icon

FQPF8N60CT

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

 5.1. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CT

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

 5.2. Size:750K  fairchild semi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CT

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored t... See More ⇒

 5.3. Size:928K  onsemi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CT

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

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Detailed specifications: FQPF7N10L, FQPF7N20, FQPF7N20L, FQPF7N40, FQPF7N65CF105, FQPF7N65CYDTU, FQPF7N80, FQPF7P06, 5N65, FQPF8N60CYDTU, FQPF8N80CYDTU, FQPF8P10, FQPF90N10V2, FQPF9N08, FQPF9N08L, FQPF9N15, FQPF9N25CT

Keywords - FQPF8N60CT MOSFET specs

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