All MOSFET. FQPF8N60CYDTU Datasheet

 

FQPF8N60CYDTU Datasheet and Replacement


   Type Designator: FQPF8N60CYDTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F
 

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FQPF8N60CYDTU Datasheet (PDF)

 ..1. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf pdf_icon

FQPF8N60CYDTU

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 5.1. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CYDTU

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 5.2. Size:750K  fairchild semi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CYDTU

February 2006TMFRFETFQPF8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored t

 5.3. Size:928K  onsemi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CYDTU

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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Datasheet: FQPF7N20 , FQPF7N20L , FQPF7N40 , FQPF7N65CF105 , FQPF7N65CYDTU , FQPF7N80 , FQPF7P06 , FQPF8N60CT , IRF530 , FQPF8N80CYDTU , FQPF8P10 , FQPF90N10V2 , FQPF9N08 , FQPF9N08L , FQPF9N15 , FQPF9N25CT , FQPF9N25CYDTU .

History: BUK655R0-75C | STRH40N6 | SDF460JED | 2SK2884B | AP9430AGYT-HF | STS1HNK60 | 2SK3484

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