All MOSFET. FQPF9N50YDTU Datasheet

 

FQPF9N50YDTU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQPF9N50YDTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-220F

 FQPF9N50YDTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF9N50YDTU Datasheet (PDF)

 ..1. Size:712K  fairchild semi
 fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf

FQPF9N50YDTU FQPF9N50YDTU

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

 6.1. Size:844K  fairchild semi
 fqpf9n50ct fqpf9n50cydtu.pdf

FQPF9N50YDTU FQPF9N50YDTU

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 6.2. Size:765K  fairchild semi
 fqpf9n50cf.pdf

FQPF9N50YDTU FQPF9N50YDTU

December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to

 6.3. Size:845K  fairchild semi
 fqp9n50c fqpf9n50c.pdf

FQPF9N50YDTU FQPF9N50YDTU

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 6.4. Size:770K  fairchild semi
 fqpf9n50c.pdf

FQPF9N50YDTU FQPF9N50YDTU

November 2013FQPF9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to m

 6.5. Size:1297K  onsemi
 fqpf9n50cf.pdf

FQPF9N50YDTU FQPF9N50YDTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6902JANTX

 

 
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