All MOSFET. FQT13N06LTF Datasheet

 

FQT13N06LTF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQT13N06LTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-223

 FQT13N06LTF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT13N06LTF Datasheet (PDF)

 ..1. Size:674K  fairchild semi
 fqt13n06ltf fqt13n06tf.pdf

FQT13N06LTF FQT13N06LTF

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail

 5.1. Size:675K  fairchild semi
 fqt13n06l.pdf

FQT13N06LTF FQT13N06LTF

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail

 5.2. Size:908K  onsemi
 fqt13n06l.pdf

FQT13N06LTF FQT13N06LTF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:688K  fairchild semi
 fqt13n06.pdf

FQT13N06LTF FQT13N06LTF

January 2002TMQFETFQT13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially tailore

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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