FQT13N06LTF Specs and Replacement

Type Designator: FQT13N06LTF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT-223

FQT13N06LTF substitution

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FQT13N06LTF datasheet

 ..1. Size:674K  fairchild semi
 fqt13n06ltf fqt13n06tf.pdf pdf_icon

FQT13N06LTF

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tail... See More ⇒

 5.1. Size:675K  fairchild semi
 fqt13n06l.pdf pdf_icon

FQT13N06LTF

May 2001 TM QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tail... See More ⇒

 5.2. Size:908K  onsemi
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FQT13N06LTF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:688K  fairchild semi
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FQT13N06LTF

January 2002 TM QFET FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailore... See More ⇒

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Detailed specifications: FQPF9N50, FQPF9N50CT, FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, RFP50N06, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, FQT2P25TF, FQT3P20TF, FQT4N20LTF, FQT4N20TF, FQT4N25TF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs