FQT7N10LTF Datasheet and Replacement
Type Designator: FQT7N10LTF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-223
FQT7N10LTF substitution
FQT7N10LTF Datasheet (PDF)
fqt7n10ltf.pdf

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai
fqt7n10l.pdf

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai
fqt7n10l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqt7n10tf.pdf

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t
Datasheet: FQT1N60CTFWS , FQT1N80TFWS , FQT2P25TF , FQT3P20TF , FQT4N20LTF , FQT4N20TF , FQT4N25TF , FQT5P10TF , K2611 , FQT7N10TF , FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , FQU12N20TU , FQU13N06LTU , FQU13N06TU .
History: IPA086N10N3G | IRF7811AVPBF | 2SK152 | UT3401ZL-AE3-R | PMDXB550UNE | JCS2N60N | NVMFS5C670NL
Keywords - FQT7N10LTF MOSFET datasheet
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History: IPA086N10N3G | IRF7811AVPBF | 2SK152 | UT3401ZL-AE3-R | PMDXB550UNE | JCS2N60N | NVMFS5C670NL



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