FQU10N20CTU
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU10N20CTU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 92
nS
Cossⓘ -
Output Capacitance: 97
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
I-PAK
FQU10N20CTU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU10N20CTU
Datasheet (PDF)
..1. Size:853K fairchild semi
fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf 
July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe
5.1. Size:723K fairchild semi
fqd10n20c fqu10n20c.pdf
January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe
5.2. Size:651K onsemi
fqd10n20c fqu10n20c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.1. Size:778K fairchild semi
fqd10n20tf fqd10n20tm fqu10n20tu.pdf
April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol
6.2. Size:574K fairchild semi
fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf
December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced
6.3. Size:576K fairchild semi
fqd10n20l fqu10n20l.pdf
December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced
6.4. Size:239K inchange semiconductor
fqu10n20.pdf
isc N-Channel MOSFET Transistor FQU10N20FEATURESDrain Source Voltage-: V = 200V(Min)DSSLow On-Resistance: R = 0.36(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower factor correctionSwitched mode power suppliesUninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T
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