IRFZ34NS MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ34NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: D2PAK
IRFZ34NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ34NS Datasheet (PDF)
0.1. irfz34nlpbf irfz34nspbf.pdf 
Size:296K _international_rectifier
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.040Ω l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
0.2. irfz34ns.pdf Size:161K _international_rectifier
PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
0.3. irfz34ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ34NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
