FQU13N10TU Datasheet and Replacement. Cross Reference Search

FQU13N10TU Datasheet (PDF)

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January 2009QFETFQD13N10 / FQU13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especiall

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January 2009QFETFQD13N10L / FQU13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology is especi

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January 2014FQD13N10L / FQU13N10LN-Channel QFET MOSFET100 V, 10 A, 180 mDescription FeaturesThis N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V,is produced using Fairchild Semiconductors proprietary ID = 5.0 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC)MOSFET technology has been

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FQU13N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

Datasheet: FQT7N10TF , FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , FQU12N20TU , FQU13N06LTU , FQU13N06TU , STP65NF06 , FQU17P06TU , FQU1N50TU , FQU1N60CTU , FQU1N60TU , FQU1N80TU , FQU20N06TU , FQU2N100TU , FQU2N50BTU .