FQU17P06TU PDF and Equivalents Search

 

FQU17P06TU Specs and Replacement


   Type Designator: FQU17P06TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: I-PAK
 

 FQU17P06TU substitution

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FQU17P06TU datasheet

 ..1. Size:804K  fairchild semi
fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQU17P06TU

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia... See More ⇒

 6.1. Size:721K  fairchild semi
fqd17p06 fqu17p06.pdf pdf_icon

FQU17P06TU

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especia... See More ⇒

 6.2. Size:2286K  cn vbsemi
fqu17p06.pdf pdf_icon

FQU17P06TU

FQU17P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒

 9.1. Size:555K  fairchild semi
fqd17n08l fqu17n08l.pdf pdf_icon

FQU17P06TU

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced ... See More ⇒

Detailed specifications: FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , FQU12N20TU , FQU13N06LTU , FQU13N06TU , FQU13N10TU , IRF830 , FQU1N50TU , FQU1N60CTU , FQU1N60TU , FQU1N80TU , FQU20N06TU , FQU2N100TU , FQU2N50BTU , FQU2N60CTU .

History: IPL60R180P6 | AGM025N10C | AGM206A | AGM15N10D | AGM1099E | PK5C1BA | NCE4953

Keywords - FQU17P06TU MOSFET specs

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