FQU1N60CTU Specs and Replacement

Type Designator: FQU1N60CTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: I-PAK

FQU1N60CTU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQU1N60CTU datasheet

 ..1. Size:752K  fairchild semi
 fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf pdf_icon

FQU1N60CTU

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especiall... See More ⇒

 6.1. Size:622K  onsemi
 fqd1n60c fqu1n60c.pdf pdf_icon

FQU1N60CTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:541K  fairchild semi
 fqd1n60tf fqd1n60tm fqu1n60tu.pdf pdf_icon

FQU1N60CTU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒

 7.2. Size:543K  fairchild semi
 fqd1n60 fqu1n60.pdf pdf_icon

FQU1N60CTU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒

SHOW MORE

Detailed specifications: FQU10N20TU, FQU11P06TU, FQU12N20TU, FQU13N06LTU, FQU13N06TU, FQU13N10TU, FQU17P06TU, FQU1N50TU, IRF9640, FQU1N60TU, FQU1N80TU, FQU20N06TU, FQU2N100TU, FQU2N50BTU, FQU2N60CTU, FQU2N60TU, FQU2N80

Keywords - FQU1N60CTU MOSFET specs

 FQU1N60CTU cross reference

 FQU1N60CTU equivalent finder

 FQU1N60CTU pdf lookup

 FQU1N60CTU substitution

 FQU1N60CTU replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.