All MOSFET. FQU1N80TU Datasheet

 

FQU1N80TU Datasheet and Replacement


   Type Designator: FQU1N80TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: I-PAK
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FQU1N80TU Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf pdf_icon

FQU1N80TU

January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially

 7.1. Size:1270K  fairchild semi
 fqu1n80.pdf pdf_icon

FQU1N80TU

January 2014FQD1N80 / FQU1N80N-Channel QFET MOSFET800 V, 1.0 A, 20 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 20 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 0.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC)technology has been espe

 7.2. Size:1446K  onsemi
 fqd1n80 fqu1n80.pdf pdf_icon

FQU1N80TU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:541K  fairchild semi
 fqd1n60tf fqd1n60tm fqu1n60tu.pdf pdf_icon

FQU1N80TU

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

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History: TK2P60D | IRFBG20

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