All MOSFET. IRFZ35 Datasheet

 

IRFZ35 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ35

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220

IRFZ35 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ35 Datasheet (PDF)

9.1. irfz34n.pdf Size:104K _international_rectifier

IRFZ35
IRFZ35

PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

9.2. irfz34vs.pdf Size:128K _international_rectifier

IRFZ35
IRFZ35

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28mΩ G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techn

 9.3. irfz34epbf.pdf Size:1901K _international_rectifier

IRFZ35
IRFZ35

PD - 94789 IRFZ34EPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Ease of Paralleling RDS(on) = 0.042Ω l Lead-Free G Description ID = 28A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest p

9.4. irfz34v.pdf Size:104K _international_rectifier

IRFZ35
IRFZ35

PD - 94042 IRFZ34V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 28mΩ G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ach

 9.5. irfz34npbf.pdf Size:179K _international_rectifier

IRFZ35
IRFZ35

PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o

9.6. irfz34.pdf Size:171K _international_rectifier

IRFZ35
IRFZ35



9.7. irfz34e.pdf Size:120K _international_rectifier

IRFZ35
IRFZ35

PD - 9.1672A IRFZ34E HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.042Ω Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc

9.8. irfz34s-l.pdf Size:193K _international_rectifier

IRFZ35
IRFZ35

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050Ω Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.9. irfz34pbf.pdf Size:2027K _international_rectifier

IRFZ35
IRFZ35

PD - 94944 IRFZ34PbF • Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline

9.10. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ35

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9.11. irfz34nlpbf irfz34nspbf.pdf Size:296K _international_rectifier

IRFZ35
IRFZ35

PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.040Ω l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

9.12. irfz30pbf.pdf Size:425K _international_rectifier

IRFZ35
IRFZ35



9.13. irfz34ns.pdf Size:161K _international_rectifier

IRFZ35
IRFZ35

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

9.14. irfz34s.pdf Size:302K _international_rectifier

IRFZ35
IRFZ35

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050Ω Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.15. irfz34a.pdf Size:500K _samsung

IRFZ35
IRFZ35

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology Ω RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature µA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

9.16. irfz34 sihfz34.pdf Size:1556K _vishay

IRFZ35
IRFZ35

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

9.17. irfz34pbf sihfz34.pdf Size:1559K _vishay

IRFZ35
IRFZ35

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

9.18. irfz34l irfz34s sihfz34l sihfz34s.pdf Size:375K _vishay

IRFZ35
IRFZ35

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.050 • Surface Mount Qg (Max.) (nC) 46 • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature Qgs (nC) 11 • Fast Switching Qgd (nC) 22

9.19. irfz34ns.pdf Size:258K _inchange_semiconductor

IRFZ35
IRFZ35

isc N-Channel MOSFET Transistor IRFZ34NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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