FQU3N60TU Specs and Replacement

Type Designator: FQU3N60TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: I-PAK

FQU3N60TU substitution

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FQU3N60TU datasheet

 ..1. Size:573K  fairchild semi
 fqd3n60tm fqu3n60 fqu3n60tu.pdf pdf_icon

FQU3N60TU

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h... See More ⇒

 7.1. Size:773K  fairchild semi
 fqu3n60ctu.pdf pdf_icon

FQU3N60TU

August 2006 QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10.5nC) DMOS technology. Low Crss ( typical 5pF) This advanced technology has been especially t... See More ⇒

 7.2. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQU3N60TU

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h... See More ⇒

 9.1. Size:705K  fairchild semi
 fqu3n40tu.pdf pdf_icon

FQU3N60TU

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog... See More ⇒

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Detailed specifications: FQU2N60TU, FQU2N80, FQU2N80TU, FQU2N90TU, FQU30N06LTU, FQU3N40TU, FQU3N60, FQU3N60CTU, IRF740, FQU3P20TU, FQU3P50TU, FQU4N20TU, FQU4N25TU, FQU5N40TU, FQU5N50CTU, FQU5N50TU, FQU5N60CTU

Keywords - FQU3N60TU MOSFET specs

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