All MOSFET. FQU3P50TU Datasheet

 

FQU3P50TU Datasheet and Replacement


   Type Designator: FQU3P50TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: I-PAK
 

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FQU3P50TU Datasheet (PDF)

 ..1. Size:761K  fairchild semi
 fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

FQU3P50TU

January 2009QFETFQD3P50 / FQU3P50500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been espe

 9.1. Size:547K  fairchild semi
 fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

FQU3P50TU

April 2000TMQFETQFETQFETQFETFQD3P20 / FQU3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

Datasheet: FQU2N80TU , FQU2N90TU , FQU30N06LTU , FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , 20N60 , FQU4N20TU , FQU4N25TU , FQU5N40TU , FQU5N50CTU , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU .

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