All MOSFET. FQU5P20TU Datasheet

 

FQU5P20TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQU5P20TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: I-PAK

 FQU5P20TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU5P20TU Datasheet (PDF)

 ..1. Size:657K  fairchild semi
fqd5p20tf fqd5p20tm fqd5p20 fqu5p20 fqu5p20tu.pdf

FQU5P20TU FQU5P20TU

October 2008QFETFQD5P20 / FQU5P20200V P-Channel MOSFETFeaturesGeneral Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF)planar stripe, DMOS technology. Fast switchingThis advanced techn

 9.1. Size:705K  fairchild semi
fqd5p10tf fqd5p10tm fqd5p10 fqu5p10.pdf

FQU5P20TU FQU5P20TU

October 2008QFETFQD5P10 / FQU5P10 100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been espec

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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