IRF6216PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6216PBF
Marking Code: F6216
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24
Ohm
Package:
SO-8
IRF6216PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6216PBF
Datasheet (PDF)
..1. Size:124K international rectifier
irf6216pbf.pdf
SMPS MOSFETPD - 95293IRF6216PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp ResetDC-DC converters -150V 0.240W@VGS =-10V -2.2Al Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001)4
0.1. Size:193K international rectifier
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
0.2. Size:193K infineon
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
7.1. Size:103K international rectifier
irf6216.pdf
PD - 94297IRF6216SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 0.240@VGS =-10V -2.2ADC-DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001
Datasheet: FQU6N40CTU
, FQU6P25TU
, FQU7N10LTU
, FQU7P06TU
, FQU7P20TU
, FQU8N25TU
, FQU8P10TU
, FQU9N25TU
, IRF630
, IRF6216PBF-1
, IRF6217PBF
, IRF6217PBF-1
, IRF6218L
, IRF6218PBF
, IRF6218SPBF
, IRF624PBF
, IRF624SPBF
.