IRF624PBF Datasheet and Replacement
Type Designator: IRF624PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 4.4
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 77
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1
Ohm
Package:
TO-220AB
-
MOSFET ⓘ Cross-Reference Search
IRF624PBF Datasheet (PDF)
..1. Size:196K vishay
irf624pbf sihf624.pdf 
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
8.2. Size:875K 1
irfs624b irf624b.pdf 
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.4. Size:1773K international rectifier
irf624spbf.pdf 
PD- 95985IRF624SPbF Lead-Free12/21/04Document Number: 91030 www.vishay.com1IRF624SPbFDocument Number: 91030 www.vishay.com2IRF624SPbFDocument Number: 91030 www.vishay.com3IRF624SPbFDocument Number: 91030 www.vishay.com4IRF624SPbFDocument Number: 91030 www.vishay.com5IRF624SPbFDocument Number: 91030 www.vishay.com6IRF624SPbFPeak Diode Recovery
8.5. Size:275K international rectifier
irf624.pdf 
PD - 95626IRF624PbF Lead-Free8/3/04Document Number: 91029 www.vishay.com1IRF624PbFDocument Number: 91029 www.vishay.com2IRF624PbFDocument Number: 91029 www.vishay.com3IRF624PbFDocument Number: 91029 www.vishay.com4IRF624PbFDocument Number: 91029 www.vishay.com5IRF624PbFDocument Number: 91029 www.vishay.com6IRF624PbFDocument Number: 91029 www.
8.6. Size:874K fairchild semi
irf624b irfs624b.pdf 
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.7. Size:944K samsung
irf624a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
8.8. Size:196K vishay
irf624 sihf624.pdf 
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
8.9. Size:197K vishay
irf624spbf sihf624s.pdf 
IRF624S, SiHF624SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 1.1 Available in Tape and ReelQg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of Paralleling Simple Drive R
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