All MOSFET. IRF624PBF Datasheet

 

IRF624PBF Datasheet and Replacement


   Type Designator: IRF624PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220AB
 

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IRF624PBF Datasheet (PDF)

 ..1. Size:196K  vishay
irf624pbf sihf624.pdf pdf_icon

IRF624PBF

IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE

 8.1. Size:300K  1
irf624 irf625.pdf pdf_icon

IRF624PBF

 8.2. Size:875K  1
irfs624b irf624b.pdf pdf_icon

IRF624PBF

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.3. Size:175K  international rectifier
irf624s.pdf pdf_icon

IRF624PBF

Datasheet: FQU9N25TU , IRF6216PBF , IRF6216PBF-1 , IRF6217PBF , IRF6217PBF-1 , IRF6218L , IRF6218PBF , IRF6218SPBF , 7N65 , IRF624SPBF , IRF630H , IRF630NLPBF , IRF630NPBF , IRF630NSPBF , IRF630PBF , IRF630SPBF , IRF634NLPBF .

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