IRF624SPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF624SPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-263
IRF624SPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF624SPBF Datasheet (PDF)
irf624spbf.pdf
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PD- 95985IRF624SPbF Lead-Free12/21/04Document Number: 91030 www.vishay.com1IRF624SPbFDocument Number: 91030 www.vishay.com2IRF624SPbFDocument Number: 91030 www.vishay.com3IRF624SPbFDocument Number: 91030 www.vishay.com4IRF624SPbFDocument Number: 91030 www.vishay.com5IRF624SPbFDocument Number: 91030 www.vishay.com6IRF624SPbFPeak Diode Recovery
irf624spbf sihf624s.pdf
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IRF624S, SiHF624SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 1.1 Available in Tape and ReelQg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of Paralleling Simple Drive R
irfs624b irf624b.pdf
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November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
irf624.pdf
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PD - 95626IRF624PbF Lead-Free8/3/04Document Number: 91029 www.vishay.com1IRF624PbFDocument Number: 91029 www.vishay.com2IRF624PbFDocument Number: 91029 www.vishay.com3IRF624PbFDocument Number: 91029 www.vishay.com4IRF624PbFDocument Number: 91029 www.vishay.com5IRF624PbFDocument Number: 91029 www.vishay.com6IRF624PbFDocument Number: 91029 www.
irf624b irfs624b.pdf
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November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
irf624a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
irf624 sihf624.pdf
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IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
irf624pbf sihf624.pdf
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IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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