All MOSFET. IRF630NLPBF Datasheet

 

IRF630NLPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF630NLPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-262

 IRF630NLPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF630NLPBF Datasheet (PDF)

 ..1. Size:335K  international rectifier
 irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf

IRF630NLPBF IRF630NLPBF

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

 ..2. Size:335K  infineon
 irf630npbf irf630nspbf irf630nlpbf.pdf

IRF630NLPBF IRF630NLPBF

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

 6.1. Size:244K  inchange semiconductor
 irf630nl.pdf

IRF630NLPBF IRF630NLPBF

Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 7.1. Size:155K  international rectifier
 irf630n.pdf

IRF630NLPBF IRF630NLPBF

PD - 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces

 7.2. Size:232K  inchange semiconductor
 irf630nstrrpbf.pdf

IRF630NLPBF IRF630NLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de

 7.3. Size:229K  inchange semiconductor
 irf630ns.pdf

IRF630NLPBF IRF630NLPBF

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 7.4. Size:245K  inchange semiconductor
 irf630n.pdf

IRF630NLPBF IRF630NLPBF

isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

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