IRF630NSPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF630NSPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 82
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.3
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 89
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO-263
IRF630NSPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF630NSPBF
Datasheet (PDF)
..1. Size:335K international rectifier
irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf 
PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec
..2. Size:335K infineon
irf630npbf irf630nspbf irf630nlpbf.pdf
PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec
6.1. Size:232K inchange semiconductor
irf630nstrrpbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de
6.2. Size:229K inchange semiconductor
irf630ns.pdf
Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
7.1. Size:155K international rectifier
irf630n.pdf
PD - 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces
7.2. Size:244K inchange semiconductor
irf630nl.pdf
Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
7.3. Size:245K inchange semiconductor
irf630n.pdf
isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
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