IRF6726MPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6726MPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DIRECTFET
IRF6726MPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6726MPBF Datasheet (PDF)
irf6726mpbf.pdf
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irf6725mpbf.pdf
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irf6722spbf.pdf
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irf6724mpbf.pdf
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irf6728mpbf.pdf
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irf6729mpbf.pdf
PD - 96229IRF6729MPbFIRF6729MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode30V max 20V max 1.4m@ 10V 2.2m@ 4.5Vl Low Profile (
irf6727mpbf.pdf
PD - 96122AIRF6727MPbFIRF6727MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6722mpbf irf6722mtrpbf.pdf
PD - 96136IRF6722MPbFIRF6722MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SWT45N60K2
History: SWT45N60K2
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