IRF7202 Datasheet and Replacement

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

IRF7205PbF-1HEXFET Power MOSFETAVDS -30 V1 8S DRDS(on) max 2 70.07 S D(@V = -10V)GS3 6RDS(on) max S D0.13 (@V = -4.5V)GS45G DQg (typical) 27 nCSO-8ID Top View-4.6 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturi

PD - 95119IRF720SPbF Lead-Free3/17/04Document Number: 91044 www.vishay.com1IRF720SPbFDocument Number: 91044 www.vishay.com2IRF720SPbFDocument Number: 91044 www.vishay.com3IRF720SPbFDocument Number: 91044 www.vishay.com4IRF720SPbFDocument Number: 91044 www.vishay.com5IRF720SPbFDocument Number: 91044 www.vishay.com6IRF720SPbFD2Pak Package Outli

IRF7205PbF l Adavanced Process Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MOSFET 2 7S Dl Surface Mountl Available in Tape & Reel 3 6S D l Dynamic dv/dt Rating45G Dl Fast Switching l Lead-FreeTop ViewDescription

PD - 94844IRF720PbF Lead-Free11/14/03Document Number: 91043 www.vishay.com1IRF720PbFDocument Number: 91043 www.vishay.com2IRF720PbFDocument Number: 91043 www.vishay.com3IRF720PbFDocument Number: 91043 www.vishay.com4IRF720PbFDocument Number: 91043 www.vishay.com5IRF720PbFDocument Number: 91043 www.vishay.com6IRF720PbFTO-220AB Package Outline

PD - 91100CPRELIMINARY IRF7201HEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Available in Tape & Reel45G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techn

PD - 95166IRF7207PbFHEXFET Power MOSFETl Generation 5 TechnologyA1 8S Dl P-Channel MosfetVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G Dl Fast SwitchingRDS(on) = 0.06l Lead-FreeTop ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechni

PD - 9.1104BIRF7205HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -30V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.070 Available in Tape & Reel4 5G D Dynamic dv/dt RatingID = -4.6A Fast SwitchingT op ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

PD- 95022IRF7201PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceAA1 8l N-Channel MOSFETS DVDSS = 30Vl Surface Mount2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating45l Fast Switching G DRDS(on) = 0.030l Lead-FreeTop ViewDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utiliz

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

PD - 91879AIRF7207HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel MosfetVDSS = -20V2 7 Surface MountS D Available in Tape & Reel3 6S D Dynamic dv/dt Rating4 5G D Fast SwitchingRDS(on) = 0.06Top ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extre

PD - 9.1103BIRF7204HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.060 Available in Tape & Reel45G D Dynamic dv/dt RatingID = -5.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

AUTOMOTIVE GRADE AUIRF7207Q FeaturesHEXFET Power MOSFET Advanced Process Technology ALow On-Resistance 1 8 VDSS -20V S D2 7Logic Level Gate Drive S D3 6P-Channel MOSFET S DRDS(on) max 0.06 4 5G DDynamic dV/dT Rating 150C Operating Temperature ID Top View-5.4A Fast Switching Fully Avalanche Rate

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720S, SiHF720SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt RatingQgs (nC) 3.3 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Sing

IRF720S, SiHF720S, IRF720L, SiHF720Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.8Available Repetitive avalanche ratedQg (Max.) (nC) 20 Fast switchingQgs (nC) 3.3 Ease of parallelingAvailable Simple drive requirementsQ

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTION

SMD Type MOSFETP-Channel MOSFETIRF7205 (KRF7205)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 Source 5 Drain Fast Switching6 Drain2 Source7 Drain3 Source8 Drain4 GateA1 8S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter

IRF7204TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

IRF7205TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop