IRF7210PBF Datasheet and Replacement
Type Designator: IRF7210PBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 9455 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SO-8
IRF7210PBF substitution
IRF7210PBF Datasheet (PDF)
irf7210pbf.pdf

PD - 97040IRF7210PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
irf7210.pdf

PD- 91844AIRF7210HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi
irf7210tr.pdf

IRF7210TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS
Datasheet: IRF7202 , IRF7204PBF , IRF7205PBF , IRF7205PBF-1 , IRF7207PBF , IRF720LPBF , IRF720PBF , IRF720SPBF , 8N60 , IRF7220GPBF , IRF7220PBF , IRF7233PBF , IRF7240PBF , IRF7241PBF , IRF7304PBF-1 , IRF7304QPBF , IRF7306QPBF .
History: FCPF36N60NT | SSH6N70A | NCES075R026T
Keywords - IRF7210PBF MOSFET datasheet
IRF7210PBF cross reference
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History: FCPF36N60NT | SSH6N70A | NCES075R026T



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