IRF7220PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7220PBF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 14
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 84
nC
trⓘ - Rise Time: 420
nS
Cossⓘ -
Output Capacitance: 4400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SO-8
IRF7220PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7220PBF
Datasheet (PDF)
..1. Size:155K international rectifier
irf7220pbf.pdf
PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
..2. Size:155K infineon
irf7220pbf.pdf
PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
7.1. Size:183K international rectifier
irf7220gpbf.pdf
PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi
7.2. Size:81K international rectifier
irf7220.pdf
PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi
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