All MOSFET. IRFZ45 Datasheet

 

IRFZ45 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFZ45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220

 IRFZ45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ45 Datasheet (PDF)

 ..2. Size:248K  inchange semiconductor
irfz45.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ45FEATURESStatic drain-source on-resistance:RDS(on) 35mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.1. Size:181K  1
irfz40fi.pdf

IRFZ45 IRFZ45

IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V

 9.2. Size:382K  international rectifier
irfz44zlpbf irfz44zpbf irfz44zspbf.pdf

IRFZ45 IRFZ45

PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 9.3. Size:43K  international rectifier
irfz1x irfz2x irfz3x irfz4x.pdf

IRFZ45

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 9.4. Size:325K  international rectifier
irfz44s irfz44l.pdf

IRFZ45 IRFZ45

PD - 9.893AIRFZ44S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

 9.5. Size:327K  international rectifier
auirfz44zstrl.pdf

IRFZ45 IRFZ45

PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically

 9.6. Size:145K  international rectifier
irfz44vs irfz44vl.pdf

IRFZ45 IRFZ45

PD - 94050AIRFZ44VSIRFZ44VLHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 16.5m Fully Avalanche RatedG Optimized for SMPS ApplicationsID = 55ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilize advancedprocessing te

 9.7. Size:333K  international rectifier
irfz46l.pdf

IRFZ45 IRFZ45

PD - 9.922AIRFZ46S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024 Fast SwitchingGID = 72A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

 9.8. Size:245K  international rectifier
auirfz46nl.pdf

IRFZ45 IRFZ45

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

 9.9. Size:319K  international rectifier
irfz48s irfz48l.pdf

IRFZ45 IRFZ45

PD - 9.894AIRFZ48S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

 9.10. Size:149K  international rectifier
irfz46ns irfz46nl.pdf

IRFZ45 IRFZ45

PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie

 9.11. Size:226K  international rectifier
irfz44vpbf.pdf

IRFZ45 IRFZ45

PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

 9.12. Size:85K  international rectifier
irfz46n.pdf

IRFZ45 IRFZ45

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

 9.13. Size:229K  international rectifier
irfz44v.pdf

IRFZ45 IRFZ45

PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mWG Fast Switching Fully Avalanche RatedID = 55A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

 9.14. Size:226K  international rectifier
irfz44npbf.pdf

IRFZ45 IRFZ45

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

 9.15. Size:100K  international rectifier
irfz44n.pdf

IRFZ45 IRFZ45

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 9.16. Size:334K  international rectifier
irfz44nlpbf irfz44nspbf.pdf

IRFZ45 IRFZ45

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

 9.17. Size:221K  international rectifier
irfz44rpbf.pdf

IRFZ45 IRFZ45

PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation

 9.18. Size:192K  international rectifier
irfz48s irfz48l 1.pdf

IRFZ45 IRFZ45

PD - 9.894AIRFZ48S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

 9.19. Size:154K  international rectifier
irfz46.pdf

IRFZ45 IRFZ45

Document Number: 90372 www.vishay.com1283Document Number: 90372 www.vishay.com1284Document Number: 90372 www.vishay.com1285Document Number: 90372 www.vishay.com1286Document Number: 90372 www.vishay.com1287Document Number: 90372 www.vishay.com1288Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

 9.20. Size:96K  international rectifier
irfz44e.pdf

IRFZ45 IRFZ45

PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi

 9.21. Size:2033K  international rectifier
irfz48pbf.pdf

IRFZ45 IRFZ45

PD - 94956IRFZ48PbF Lead-Free1/29/04Document Number: 91294 www.vishay.com1IRFZ48PbFDocument Number: 91294 www.vishay.com2IRFZ48PbFDocument Number: 91294 www.vishay.com3IRFZ48PbFDocument Number: 91294 www.vishay.com4IRFZ48PbFDocument Number: 91294 www.vishay.com5IRFZ48PbFDocument Number: 91294 www.vishay.com6IRFZ48PbFTO-220AB Package Outline

 9.22. Size:53K  international rectifier
irfz48n 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

 9.23. Size:252K  international rectifier
auirfz48zstrl.pdf

IRFZ45 IRFZ45

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

 9.24. Size:131K  international rectifier
irfz48ns irfz48nl.pdf

IRFZ45 IRFZ45

PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie

 9.25. Size:52K  international rectifier
irfz44n 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

 9.26. Size:153K  international rectifier
irfz44r.pdf

IRFZ45 IRFZ45

PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

 9.27. Size:859K  international rectifier
irfz44.pdf

IRFZ45 IRFZ45

PD - 94943IRFZ44PbF Lead-Free01/14/04Document Number: 91291 www.vishay.com1IRFZ44PbFDocument Number: 91291 www.vishay.com2IRFZ44PbFDocument Number: 91291 www.vishay.com3IRFZ44PbFDocument Number: 91291 www.vishay.com4IRFZ44PbFDocument Number: 91291 www.vishay.com5IRFZ44PbFDocument Number: 91291 www.vishay.com6IRFZ44PbFTO-220AB Package Outline

 9.28. Size:358K  international rectifier
irfz46s.pdf

IRFZ45 IRFZ45

PD - 9.922AIRFZ46S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024 Fast SwitchingGID = 72A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

 9.29. Size:102K  international rectifier
irfz48n.pdf

IRFZ45 IRFZ45

PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

 9.30. Size:301K  international rectifier
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf

IRFZ45 IRFZ45

PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 9.31. Size:215K  international rectifier
irfz46npbf.pdf

IRFZ45 IRFZ45

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 9.32. Size:181K  international rectifier
irfz40.pdf

IRFZ45 IRFZ45

IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V

 9.33. Size:150K  international rectifier
irfz44epbf.pdf

IRFZ45 IRFZ45

PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.

 9.34. Size:375K  international rectifier
irfz46zlpbf irfz46zpbf irfz46zspbf.pdf

IRFZ45 IRFZ45

PD - 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 9.35. Size:274K  international rectifier
auirfz44vzstrl.pdf

IRFZ45 IRFZ45

PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo

 9.36. Size:679K  international rectifier
irfz46nlpbf.pdf

IRFZ45 IRFZ45

PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t

 9.37. Size:163K  international rectifier
irfz44es irfz44el.pdf

IRFZ45 IRFZ45

PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve

 9.38. Size:226K  international rectifier
irfz48npbf.pdf

IRFZ45 IRFZ45

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 9.39. Size:234K  international rectifier
irfz44espbf.pdf

IRFZ45 IRFZ45

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

 9.40. Size:151K  international rectifier
irfz44ns irfz44nl.pdf

IRFZ45 IRFZ45

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

 9.41. Size:273K  international rectifier
auirfz44nl auirfz44ns.pdf

IRFZ45 IRFZ45

PD-96391AAUTOMOTIVE GRADEAUIRFZ44NSAUIRFZ44NLHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.17.5m 175C Operating Temperature G Fast SwitchingS ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDDescription

 9.42. Size:282K  international rectifier
irfz48vs.pdf

IRFZ45 IRFZ45

PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

 9.43. Size:301K  international rectifier
irfz48nlpbf.pdf

IRFZ45 IRFZ45

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

 9.44. Size:179K  international rectifier
irfz48vspbf.pdf

IRFZ45 IRFZ45

PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

 9.45. Size:111K  international rectifier
irfz48v.pdf

IRFZ45 IRFZ45

PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

 9.46. Size:245K  international rectifier
auirfz46ns.pdf

IRFZ45 IRFZ45

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

 9.47. Size:175K  international rectifier
irfz48.pdf

IRFZ45 IRFZ45

 9.48. Size:262K  international rectifier
irfz48rspbf irfz48rlpbf.pdf

IRFZ45 IRFZ45

PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier

 9.49. Size:320K  international rectifier
auirfz44n.pdf

IRFZ45 IRFZ45

AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc

 9.50. Size:136K  international rectifier
irfz48r.pdf

IRFZ45 IRFZ45

PD - 93958IRFZ48RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.018G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ48 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

 9.51. Size:580K  international rectifier
auirfz44v.pdf

IRFZ45 IRFZ45

PD - 96415AUTOMOTIVE GRADEAUIRFZ44VHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Planar Technology 60Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.16.5ml 175C Operating TemperatureGl Fast SwitchingID 55Al Fully Avalanche RatedSl Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *DescriptionSD

 9.52. Size:376K  international rectifier
irfz48zlpbf irfz48zpbf irfz48zspbf.pdf

IRFZ45 IRFZ45

PD - 95574AIRFZ48ZPbFIRFZ48ZSPbFIRFZ48ZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 61ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques

 9.53. Size:57K  international rectifier
irfz44ns 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

 9.54. Size:53K  philips
irfz48n 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

 9.55. Size:52K  philips
irfz44n 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

 9.56. Size:57K  philips
irfz44ns 1.pdf

IRFZ45 IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

 9.57. Size:351K  st
irfz40 irfz42.pdf

IRFZ45 IRFZ45

 9.58. Size:181K  st
irfz40.pdf

IRFZ45 IRFZ45

IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V

 9.59. Size:105K  njs
irfz46.pdf

IRFZ45 IRFZ45

 9.60. Size:503K  samsung
irfz44a.pdf

IRFZ45 IRFZ45

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

 9.61. Size:377K  vishay
irfz48l irfz48s sihfz48l sihfz48s.pdf

IRFZ45 IRFZ45

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)

 9.62. Size:815K  vishay
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf

IRFZ45 IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S

 9.63. Size:790K  vishay
irfz44s irfz44l sihfz44s sihfz44l.pdf

IRFZ45 IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S

 9.64. Size:1517K  vishay
irfz48 irfz48pbf sihfz48.pdf

IRFZ45 IRFZ45

IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E

 9.65. Size:1476K  vishay
irfz40pbf sihfz40.pdf

IRFZ45 IRFZ45

IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

 9.66. Size:1059K  vishay
irfz48r sihfz48r.pdf

IRFZ45 IRFZ45

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

 9.67. Size:228K  vishay
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf

IRFZ45 IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

 9.68. Size:1061K  vishay
irfz48r irfz48rpbf sihfz48r.pdf

IRFZ45 IRFZ45

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

 9.69. Size:1287K  vishay
irfz44r sihfz44r.pdf

IRFZ45 IRFZ45

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

 9.70. Size:203K  vishay
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf

IRFZ45 IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

 9.71. Size:1289K  vishay
irfz44r irfz44rpbf sihfz44r.pdf

IRFZ45 IRFZ45

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

 9.72. Size:1475K  vishay
irfz40 sihfz40.pdf

IRFZ45 IRFZ45

IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

 9.73. Size:1540K  vishay
irfz44 sihfz44.pdf

IRFZ45 IRFZ45

IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 9.74. Size:1542K  vishay
irfz44pbf sihfz44.pdf

IRFZ45 IRFZ45

IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 9.75. Size:375K  infineon
irfz46zpbf irfz46zspbf irfz46zlpbf.pdf

IRFZ45 IRFZ45

PD - 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 9.76. Size:301K  infineon
irfz48nspbf irfz48nlpbf.pdf

IRFZ45 IRFZ45

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

 9.77. Size:220K  infineon
auirfz48n.pdf

IRFZ45 IRFZ45

PD - 97732AUTOMOTIVE GRADEAUIRFZ48NHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.11ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 14ml Fast SwitchingSID69Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDesc

 9.78. Size:223K  infineon
irfz48vpbf.pdf

IRFZ45 IRFZ45

PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

 9.79. Size:382K  infineon
irfz44zpbf irfz44zspbf irfz44zlpbf.pdf

IRFZ45 IRFZ45

PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 9.80. Size:226K  infineon
irfz44vpbf.pdf

IRFZ45 IRFZ45

PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

 9.81. Size:150K  infineon
irfz44npbf.pdf

IRFZ45 IRFZ45

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

 9.82. Size:372K  infineon
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf

IRFZ45 IRFZ45

PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel

 9.83. Size:654K  infineon
auirfz44vzs.pdf

IRFZ45 IRFZ45

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

 9.84. Size:713K  infineon
auirfz44z auirfz44zs.pdf

IRFZ45 IRFZ45

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

 9.85. Size:215K  infineon
irfz46npbf.pdf

IRFZ45 IRFZ45

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 9.86. Size:234K  infineon
irfz44espbf irfz44elpbf.pdf

IRFZ45 IRFZ45

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

 9.87. Size:334K  infineon
irfz44nspbf irfz44nlpbf.pdf

IRFZ45 IRFZ45

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

 9.88. Size:252K  infineon
auirfz48z auirfz48zs.pdf

IRFZ45 IRFZ45

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

 9.89. Size:226K  infineon
irfz48npbf.pdf

IRFZ45 IRFZ45

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 9.90. Size:301K  infineon
irfz44vz irfz44vzs irfz44vzl.pdf

IRFZ45 IRFZ45

PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 9.91. Size:252K  lrc
lirfz44n.pdf

IRFZ45 IRFZ45

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

 9.92. Size:1138K  cn evvo
irfz44n.pdf

IRFZ45 IRFZ45

IRFZ44N 60V N-Channel MOSFETDGeneral DescriptionThe IRFZ44NS/IRFZ44N uses advanced trench technologyand design to provide excellent RDS(ON) with low gate cha rg e.GIt ca n be used in a wide variety of applications.SN-Channel MOSFETProduct Summary60VVDS ID (at VGS=-10V) 50A RDS(ON) (at VGS=10V)

 9.93. Size:437K  cn evvo
irfz48n.pdf

IRFZ45 IRFZ45

IRFZ48NN-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 60V 12m 60A technology Description TO220 Pin Configuration The IRFZ48N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSO

 9.94. Size:1160K  cn vbsemi
irfz44rp.pdf

IRFZ45 IRFZ45

IRFZ44RPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 9.95. Size:1792K  cn vbsemi
irfz44es.pdf

IRFZ45 IRFZ45

IRFZ44ESwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 9.96. Size:910K  cn vbsemi
irfz44vp.pdf

IRFZ45 IRFZ45

IRFZ44VPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

 9.97. Size:861K  cn vbsemi
irfz48vpbf.pdf

IRFZ45 IRFZ45

IRFZ48VPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 9.98. Size:1790K  cn vbsemi
irfz48np.pdf

IRFZ45 IRFZ45

IRFZ48NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 9.99. Size:824K  cn vbsemi
irfz44npbf.pdf

IRFZ45 IRFZ45

IRFZ44NPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 9.100. Size:901K  cn vbsemi
irfz48rsp.pdf

IRFZ45 IRFZ45

IRFZ48RSPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

 9.101. Size:1459K  cn vbsemi
irfz44ns.pdf

IRFZ45 IRFZ45

IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 9.102. Size:856K  cn vbsemi
irfz46ns.pdf

IRFZ45 IRFZ45

IRFZ46NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 9.103. Size:570K  cn haohai electr
hirfz44n hirfz44f.pdf

IRFZ45 IRFZ45

IRFZ44N-Channel MOSFET49A, 55V, N H IRFZ44N HIRFZ44N HAOHAI TO-220C , 50Pcs 1000Pcs 5000PcsIRFZ44F HIRFZ44F HAOHAI TO-220F , 50Pcs 1000Pcs 5000PcsIRFZ44 Series Pin Assignment

 9.104. Size:245K  inchange semiconductor
irfz44vz.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.105. Size:205K  inchange semiconductor
irfz44es.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

 9.106. Size:246K  inchange semiconductor
irfz44z.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ZIIRFZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.107. Size:251K  inchange semiconductor
irfz48ns.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.108. Size:246K  inchange semiconductor
irfz46n.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.109. Size:245K  inchange semiconductor
irfz44v.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44V IIRFZ44VFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.110. Size:100K  inchange semiconductor
irfz44n.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

 9.111. Size:246K  inchange semiconductor
irfz48z.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48ZFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 9.112. Size:246K  inchange semiconductor
irfz44e.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 9.113. Size:258K  inchange semiconductor
irfz44zs.pdf

IRFZ45 IRFZ45

Isc N-Channel MOSFET Transistor IRFZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.114. Size:144K  inchange semiconductor
irfz48n.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

 9.115. Size:258K  inchange semiconductor
irfz46zs.pdf

IRFZ45 IRFZ45

Isc N-Channel MOSFET Transistor IRFZ46ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.116. Size:145K  inchange semiconductor
irfz44cn.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

 9.117. Size:246K  inchange semiconductor
irfz46z.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46ZIIRFZ46ZFEATURESStatic drain-source on-resistance:RDS(on) 13.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.118. Size:257K  inchange semiconductor
irfz44vzs.pdf

IRFZ45 IRFZ45

Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 9.119. Size:213K  inchange semiconductor
irfz48vs.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.120. Size:246K  inchange semiconductor
irfz48v.pdf

IRFZ45 IRFZ45

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 9.121. Size:258K  inchange semiconductor
irfz48zs.pdf

IRFZ45 IRFZ45

Isc N-Channel MOSFET Transistor IRFZ48ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.122. Size:249K  inchange semiconductor
irfz48.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ48FEATURESStatic drain-source on-resistance:RDS(on) 35mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.123. Size:257K  inchange semiconductor
irfz44ns.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.124. Size:258K  inchange semiconductor
irfz46ns.pdf

IRFZ45 IRFZ45

isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRF3205 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L .

 

 
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