All MOSFET. IRFZ45 Datasheet

 

IRFZ45 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ45

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO220

IRFZ45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ45 Datasheet (PDF)

5.1. irfz44n.pdf Size:100K _update

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

5.2. irfz48vspbf.pdf Size:179K _update

IRFZ45
IRFZ45

PD - 95573 IRFZ48VSPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 12mΩ G l Fully Avalanche Rated l Optimized for SMPS Applications ID = 72A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc

 5.3. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _update

IRFZ45
IRFZ45

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9mΩ G Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

5.4. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _update

IRFZ45
IRFZ45

PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11mΩ Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques

 5.5. irfz44r irfz44rpbf.pdf Size:1289K _update

IRFZ45
IRFZ45

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

5.6. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _update

IRFZ45
IRFZ45

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

5.7. irfz44epbf.pdf Size:150K _update

IRFZ45
IRFZ45

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.8. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _update

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IRFZ45

PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6mΩ G Lead-Free Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

5.9. irfz46.pdf Size:105K _update

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IRFZ45



5.10. irfz48 irfz48pbf.pdf Size:1517K _update

IRFZ45
IRFZ45

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • Ultra Low On-Resistance COMPLIANT Qg (Max.) (nC) 110 • Very Low Thermal Resistance Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC) 36 • Fast Switching Configuration Single • E

5.11. irfz46nlpbf.pdf Size:679K _update

IRFZ45
IRFZ45

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

5.12. irfz48rl irfz48rlpbf irfz48rs irfz48rspbf.pdf Size:228K _update

IRFZ45
IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Si

5.13. irfz44npbf.pdf Size:226K _update

IRFZ45
IRFZ45

PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 17.5mΩ l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.14. irfz46npbf.pdf Size:215K _update

IRFZ45
IRFZ45

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

5.15. irfz44pbf.pdf Size:1542K _update

IRFZ45
IRFZ45

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

5.16. irfz46l.pdf Size:333K _update

IRFZ45
IRFZ45

PD - 9.922A IRFZ46S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175°C Operating Temperature RDS(on) = 0.024Ω Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

5.17. irfz48npbf.pdf Size:226K _update

IRFZ45
IRFZ45

PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

5.18. irfz48l irfz48s.pdf Size:377K _update

IRFZ45
IRFZ45

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Surface Mount (IRFZ48S, SiHFZ48S) Qg (Max.) (nC) 110 • Low-Profile Through-Hole (IRFZ48L, SiHFZ48L) Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC)

5.19. irfz44espbf.pdf Size:234K _update

IRFZ45
IRFZ45

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

5.20. irfz40pbf.pdf Size:1476K _update

IRFZ45
IRFZ45

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

5.21. irfz44vpbf.pdf Size:226K _update

IRFZ45
IRFZ45

PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

5.22. irfz48r irfz48rpbf.pdf Size:1061K _update

IRFZ45
IRFZ45

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiH

5.23. irfz44l irfz44s irfz44spbf.pdf Size:815K _update

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IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

5.24. irfz48nlpbf.pdf Size:301K _update

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IRFZ45

 IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

5.25. irfz44nlpbf irfz44nspbf.pdf Size:334K _update

IRFZ45
IRFZ45

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

5.26. irfz44n 1.pdf Size:52K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

5.27. irfz48n 1.pdf Size:53K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

5.28. irfz44ns 1.pdf Size:57K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

5.29. irfz40.pdf Size:181K _st

IRFZ45
IRFZ45

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 ? 50 A IRFZ40FI 50 V < 0.028 ? 27 A TYPICAL R = 0.022 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH C

5.30. irfz40-42.pdf Size:351K _st2

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IRFZ45

5.31. irfz44n.pdf Size:100K _international_rectifier

IRFZ45
IRFZ45

PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

5.32. irfz44ns.pdf Size:151K _international_rectifier

IRFZ45
IRFZ45

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

5.33. irfz44n 1.pdf Size:52K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

5.34. irfz44s.pdf Size:325K _international_rectifier

IRFZ45
IRFZ45

PD - 9.893A IRFZ44S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.35. irfz48r.pdf Size:136K _international_rectifier

IRFZ45
IRFZ45

PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.018? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

5.36. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ45

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5.37. irfz46s.pdf Size:358K _international_rectifier

IRFZ45
IRFZ45

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024? Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.38. irfz48n.pdf Size:102K _international_rectifier

IRFZ45
IRFZ45

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

5.39. irfz44vs.pdf Size:145K _international_rectifier

IRFZ45
IRFZ45

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques

5.40. irfz46.pdf Size:154K _international_rectifier

IRFZ45
IRFZ45

Document Number: 90372 www.vishay.com 1283 Document Number: 90372 www.vishay.com 1284 Document Number: 90372 www.vishay.com 1285 Document Number: 90372 www.vishay.com 1286 Document Number: 90372 www.vishay.com 1287 Document Number: 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

5.41. irfz48pbf.pdf Size:2033K _international_rectifier

IRFZ45
IRFZ45

PD - 94956 IRFZ48PbF Lead-Free 1/29/04 Document Number: 91294 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294 www.vishay.com 5 IRFZ48PbF Document Number: 91294 www.vishay.com 6 IRFZ48PbF TO-220AB Package Outline Dimen

5.42. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

5.43. irfz46n.pdf Size:85K _international_rectifier

IRFZ45
IRFZ45

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

5.44. irfz46ns.pdf Size:149K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr

5.45. irfz48s.pdf Size:319K _international_rectifier

IRFZ45
IRFZ45

PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.46. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

5.47. irfz48vs.pdf Size:282K _international_rectifier

IRFZ45
IRFZ45

PD - 94051A IRFZ48VS HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

5.48. irfz44.pdf Size:859K _international_rectifier

IRFZ45
IRFZ45

PD - 94943 IRFZ44PbF Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline Dime

5.49. irfz48v.pdf Size:111K _international_rectifier

IRFZ45
IRFZ45

PD - 93959A IRFZ48V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

5.50. irfz48.pdf Size:175K _international_rectifier

IRFZ45
IRFZ45

5.51. irfz48rspbf irfz48rlpbf.pdf Size:262K _international_rectifier

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IRFZ45

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018? l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize

5.52. irfz44es.pdf Size:163K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

5.53. irfz48ns.pdf Size:131K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

5.54. irfz44e.pdf Size:96K _international_rectifier

IRFZ45
IRFZ45

PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb

5.55. irfz40.pdf Size:181K _international_rectifier

IRFZ45
IRFZ45

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 ? 50 A IRFZ40FI 50 V < 0.028 ? 27 A TYPICAL R = 0.022 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH C

5.56. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ45
IRFZ45

PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175C Operating Temperature l Fast Switching RDS(on) = 0.028? G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rect

5.57. irfz44r.pdf Size:153K _international_rectifier

IRFZ45
IRFZ45

PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.028? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

5.58. irfz44v.pdf Size:229K _international_rectifier

IRFZ45
IRFZ45

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

5.59. irfz48s-l.pdf Size:192K _international_rectifier

IRFZ45
IRFZ45

PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

5.60. irfz44a.pdf Size:503K _samsung

IRFZ45
IRFZ45

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

5.61. irfz48r sihfz48r.pdf Size:1059K _vishay

IRFZ45
IRFZ45

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiHFZ48 for Linear/Aud

5.62. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ45
IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) (?)VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast Switching Qgd (nC)

5.63. irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf Size:203K _vishay

IRFZ45
IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Single Drop in Re

5.64. irfz40 sihfz40.pdf Size:1475K _vishay

IRFZ45
IRFZ45

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 Fast Switching Qg (Max.) (nC) 67 Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs fr

5.65. irfz44 sihfz44.pdf Size:1540K _vishay

IRFZ45
IRFZ45

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

5.66. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ45
IRFZ45

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the IRFZ44, SiHFZ44 for

5.67. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contro

5.68. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

5.69. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contr

5.70. lirfz44n.pdf Size:252K _lrc

IRFZ45
IRFZ45

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

Datasheet: IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ44N , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L .

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