All MOSFET. IRFZ45 Datasheet

 

IRFZ45 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ45

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO220

IRFZ45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ45 Datasheet (PDF)

0.1. irfz45.pdf Size:248K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ45 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P

9.1. irfz44ns 1.pdf Size:57K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

9.2. irfz44n 1.pdf Size:52K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-s

 9.3. irfz48n 1.pdf Size:53K _philips

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-s

9.4. irfz40.pdf Size:181K _st

IRFZ45
IRFZ45

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A TYPICAL R = 0.022 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS

 9.5. irfz40 irfz42.pdf Size:351K _st

IRFZ45
IRFZ45



9.6. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

9.7. irfz48vspbf.pdf Size:179K _international_rectifier

IRFZ45
IRFZ45

PD - 95573 IRFZ48VSPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 12mΩ G l Fully Avalanche Rated l Optimized for SMPS Applications ID = 72A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc

9.8. irfz44vpbf.pdf Size:226K _international_rectifier

IRFZ45
IRFZ45

PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

9.9. irfz44v.pdf Size:229K _international_rectifier

IRFZ45
IRFZ45

PD - 93957A IRFZ44V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

9.10. irfz48rspbf irfz48rlpbf.pdf Size:262K _international_rectifier

IRFZ45
IRFZ45

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET® Power MOSFET l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018Ω l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier

9.11. irfz48r.pdf Size:136K _international_rectifier

IRFZ45
IRFZ45

PD - 93958 IRFZ48R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.018Ω G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize a

9.12. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ45
IRFZ45

PD - 94823 IRFZ44RPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.028Ω G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from Internation

9.13. irfz46ns.pdf Size:149K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.0165Ω Fully Avalanche Rated G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

9.14. irfz48.pdf Size:175K _international_rectifier

IRFZ45
IRFZ45



9.15. irfz48s.pdf Size:319K _international_rectifier

IRFZ45
IRFZ45

PD - 9.894A IRFZ48S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175°C Operating Temperature RDS(on) = 0.018Ω Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.16. irfz46n.pdf Size:85K _international_rectifier

IRFZ45
IRFZ45

PD-91277 IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

9.17. irfz44npbf.pdf Size:226K _international_rectifier

IRFZ45
IRFZ45

PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 17.5mΩ l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

9.18. irfz48ns.pdf Size:131K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014Ω Description G Advanced HEXFET® Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achie

9.19. auirfz48zstrl.pdf Size:252K _international_rectifier

IRFZ45
IRFZ45

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m Ω G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

9.20. irfz44e.pdf Size:96K _international_rectifier

IRFZ45
IRFZ45

PD - 91671B IRFZ44E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

9.21. irfz48npbf.pdf Size:226K _international_rectifier

IRFZ45
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PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

9.22. irfz48pbf.pdf Size:2033K _international_rectifier

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IRFZ45

PD - 94956 IRFZ48PbF • Lead-Free 1/29/04 Document Number: 91294 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294 www.vishay.com 5 IRFZ48PbF Document Number: 91294 www.vishay.com 6 IRFZ48PbF TO-220AB Package Outline

9.23. auirfz46ns.pdf Size:245K _international_rectifier

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IRFZ45

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

9.24. irfz46npbf.pdf Size:215K _international_rectifier

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PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

9.25. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _international_rectifier

IRFZ45
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PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11mΩ Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques

9.26. irfz44.pdf Size:859K _international_rectifier

IRFZ45
IRFZ45

PD - 94943 IRFZ44PbF • Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline

9.27. irfz44espbf.pdf Size:234K _international_rectifier

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IRFZ45

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

9.28. irfz44r.pdf Size:153K _international_rectifier

IRFZ45
IRFZ45

PD - 93956 IRFZ44R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.028Ω G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize a

9.29. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _international_rectifier

IRFZ45
IRFZ45

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

9.30. irfz46l.pdf Size:333K _international_rectifier

IRFZ45
IRFZ45

PD - 9.922A IRFZ46S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175°C Operating Temperature RDS(on) = 0.024Ω Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.31. irfz44s.pdf Size:325K _international_rectifier

IRFZ45
IRFZ45

PD - 9.893A IRFZ44S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175°C Operating Temperature RDS(on) = 0.028Ω Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.32. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _international_rectifier

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PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6mΩ G Lead-Free Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

9.33. irfz48s-l.pdf Size:192K _international_rectifier

IRFZ45
IRFZ45

PD - 9.894A IRFZ48S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175°C Operating Temperature RDS(on) = 0.018Ω Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.34. irfz40.pdf Size:181K _international_rectifier

IRFZ45
IRFZ45

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A TYPICAL R = 0.022 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS

9.35. irfz44n 1.pdf Size:52K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-s

9.36. irfz48n.pdf Size:102K _international_rectifier

IRFZ45
IRFZ45

PD - 91406 IRFZ48N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 14mΩ Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

9.37. irfz46s.pdf Size:358K _international_rectifier

IRFZ45
IRFZ45

PD - 9.922A IRFZ46S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175°C Operating Temperature RDS(on) = 0.024Ω Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

9.38. auirfz44zstrl.pdf Size:327K _international_rectifier

IRFZ45
IRFZ45

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Ω Tjmax G ● Lead-Free, RoHS Compliant ID 51A S ● Automotive Qualified * D Description D Specifically

9.39. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _international_rectifier

IRFZ45
IRFZ45

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9mΩ G Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

9.40. irfz46.pdf Size:154K _international_rectifier

IRFZ45
IRFZ45

Document Number: 90372 www.vishay.com 1283 Document Number: 90372 www.vishay.com 1284 Document Number: 90372 www.vishay.com 1285 Document Number: 90372 www.vishay.com 1286 Document Number: 90372 www.vishay.com 1287 Document Number: 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

9.41. irfz44ns.pdf Size:151K _international_rectifier

IRFZ45
IRFZ45

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175Ω Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

9.42. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ45

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9.43. irfz44vs.pdf Size:145K _international_rectifier

IRFZ45
IRFZ45

PD - 94050A IRFZ44VS IRFZ44VL HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 16.5mΩ Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te

9.44. irfz48v.pdf Size:111K _international_rectifier

IRFZ45
IRFZ45

PD - 93959A IRFZ48V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12mΩ G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

9.45. irfz48vs.pdf Size:282K _international_rectifier

IRFZ45
IRFZ45

PD - 94051A IRFZ48VS HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12mΩ G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to a

9.46. irfz46nlpbf.pdf Size:679K _international_rectifier

IRFZ45
IRFZ45

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

9.47. irfz44n.pdf Size:100K _international_rectifier

IRFZ45
IRFZ45

PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5mΩ G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

9.48. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ45
IRFZ45

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

9.49. irfz44epbf.pdf Size:150K _international_rectifier

IRFZ45
IRFZ45

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

9.50. irfz44es.pdf Size:163K _international_rectifier

IRFZ45
IRFZ45

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature RDS(on) = 0.023Ω G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

9.51. irfz48nlpbf.pdf Size:301K _international_rectifier

IRFZ45
IRFZ45

 IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

9.52. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ45
IRFZ45

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-s

9.53. auirfz44vzstrl.pdf Size:274K _international_rectifier

IRFZ45
IRFZ45

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET® Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6mΩ l 175°C Operating Temperature l Fast Switching G max. 12mΩ l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

9.54. irfz46.pdf Size:105K _njs

IRFZ45
IRFZ45



9.55. irfz44a.pdf Size:503K _samsung

IRFZ45
IRFZ45

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology Ω RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Ω Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

9.56. irfz48r irfz48rpbf sihfz48r.pdf Size:1061K _vishay

IRFZ45
IRFZ45

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiH

9.57. irfz48 irfz48pbf sihfz48.pdf Size:1517K _vishay

IRFZ45
IRFZ45

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • Ultra Low On-Resistance COMPLIANT Qg (Max.) (nC) 110 • Very Low Thermal Resistance Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC) 36 • Fast Switching Configuration Single • E

9.58. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ45
IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

9.59. irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf Size:815K _vishay

IRFZ45
IRFZ45

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

9.60. irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf Size:203K _vishay

IRFZ45
IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Si

9.61. irfz48r sihfz48r.pdf Size:1059K _vishay

IRFZ45
IRFZ45

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiH

9.62. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ45
IRFZ45

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

9.63. irfz44pbf sihfz44.pdf Size:1542K _vishay

IRFZ45
IRFZ45

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

9.64. irfz44r irfz44rpbf sihfz44r.pdf Size:1289K _vishay

IRFZ45
IRFZ45

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

9.65. irfz48l irfz48s sihfz48l sihfz48s.pdf Size:377K _vishay

IRFZ45
IRFZ45

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Surface Mount (IRFZ48S, SiHFZ48S) Qg (Max.) (nC) 110 • Low-Profile Through-Hole (IRFZ48L, SiHFZ48L) Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC)

9.66. irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf Size:228K _vishay

IRFZ45
IRFZ45

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Si

9.67. irfz44 sihfz44.pdf Size:1540K _vishay

IRFZ45
IRFZ45

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

9.68. irfz40pbf sihfz40.pdf Size:1476K _vishay

IRFZ45
IRFZ45

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

9.69. irfz40 sihfz40.pdf Size:1475K _vishay

IRFZ45
IRFZ45

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

9.70. lirfz44n.pdf Size:252K _lrc

IRFZ45
IRFZ45

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

9.71. irfz44z.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44Z,IIRFZ44Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

9.72. irfz48zs.pdf Size:258K _inchange_semiconductor

IRFZ45
IRFZ45

Isc N-Channel MOSFET Transistor IRFZ48ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

9.73. irfz44zs.pdf Size:258K _inchange_semiconductor

IRFZ45
IRFZ45

Isc N-Channel MOSFET Transistor IRFZ44ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

9.74. irfz44v.pdf Size:245K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44V, IIRFZ44V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

9.75. irfz46ns.pdf Size:258K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ46NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

9.76. irfz48.pdf Size:249K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ48 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P

9.77. irfz46n.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46N, IIRFZ46N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

9.78. irfz48ns.pdf Size:251K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ48NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

9.79. irfz46zs.pdf Size:258K _inchange_semiconductor

IRFZ45
IRFZ45

Isc N-Channel MOSFET Transistor IRFZ46ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

9.80. irfz44e.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E, IIRFZ44E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

9.81. irfz46z.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46Z,IIRFZ46Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

9.82. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

9.83. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

9.84. irfz44vzs.pdf Size:257K _inchange_semiconductor

IRFZ45
IRFZ45

Isc N-Channel MOSFET Transistor IRFZ44VZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

9.85. irfz44vz.pdf Size:245K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ,IIRFZ44VZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

9.86. irfz44ns.pdf Size:257K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ44NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

9.87. irfz48v.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48V, IIRFZ48V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

9.88. irfz48vs.pdf Size:213K _inchange_semiconductor

IRFZ45
IRFZ45

isc N-Channel MOSFET Transistor IRFZ48VS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

9.89. irfz44n.pdf Size:100K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

9.90. irfz44es.pdf Size:205K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =2

9.91. irfz48z.pdf Size:246K _inchange_semiconductor

IRFZ45
IRFZ45

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z, IIRFZ48Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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