IRF7316QPBF MOSFET Datasheet: P-Ch, 30V, 4.9A. Full specification with pinout and replacement list

IRF7316QPBF Specs and Replacement

Type Designator: IRF7316QPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SO-8

IRF7316QPBF substitution

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IRF7316QPBF datasheet

..1. Size:235K 1
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PD - 96126 IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 RDS(on) = 0.058 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appli... See More ⇒

..2. Size:215K international rectifier
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PD - 96126A IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description These HEXFET Power MOSFET's in a Dual SO-8 package utilize the laste... See More ⇒

6.1. Size:256K 1
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AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8 S1 D1 -30V Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive D2 max. G2 0.058 Dual P Channel MOSFET Top View ID -4.9A Surface Mount Available in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Complian... See More ⇒

6.2. Size:256K infineon
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