All MOSFET. SD210DE Datasheet

 

SD210DE MOSFET. Datasheet pdf. Equivalent

Type Designator: SD210DE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 40 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 45 Ohm

Package: TO-72

SD210DE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SD210DE Datasheet (PDF)

0.1. sd210de sd212de sd214de.pdf Size:29K _calogic

SD210DE
SD210DE

High-Speed Analog N-Channel DMOS FETs SD210 / SD212 / SD214 FEATURES DESCRIPTION • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a • • Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with • • Low Feedthrough and Feedba

9.1. 2sd2100.pdf Size:144K _sanyo

SD210DE
SD210DE

Ordering number:EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features Package Dimensions · Low saturation voltage. unit:mm · Contains diode between collector and emitter. 2038 · Contains bias resistance between base and emitter. [2SB1397/2SD2100] · Large current capacity. · Small-sized package making it easy to prov

9.2. sd210 sd212 sd214.pdf Size:88K _njs

SD210DE
SD210DE



 9.3. ssd2106.pdf Size:242K _samsung

SD210DE
SD210DE

 8 SOIC FEATURES 1 8 S D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times S S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID D D D D SSD2106 - 20V 0.25 - 2.5A P-Channel MOSFET Absolute Maximu

9.4. ssd2102.pdf Size:353K _samsung

SD210DE
SD210DE

 8 SOIC FEATURES 1 8 S D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times S S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID D D D D SSD2102 - 20V 0.06 - 5.3A P-Channel MOSFET Absolute Maximu

 9.5. ssd2101.pdf Size:363K _samsung

SD210DE
SD210DE

 8 SOIC FEATURES 1 8 N/C D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times D D D D Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID S S SSD2101 30V 0.03 7.0A N-Channel MOSFET Absolute Maximum Ratings S

9.6. ssd2108.pdf Size:361K _samsung

SD210DE
SD210DE

 8 SOIC FEATURES 1 8 S D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times S S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID D D D D SSD2108 - 20V 0.10 - 4.3A P-Channel MOSFET Absolute Maximu

9.7. ssd2104.pdf Size:353K _samsung

SD210DE
SD210DE

 8 SOIC FEATURES 1 8 S D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times S S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID D D D D SSD2104 - 30V 0.07 - 4.6A P-Channel MOSFET Absolute Maximu

9.8. 2sd2104.pdf Size:35K _hitachi

SD210DE
SD210DE

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 kΩ 200 Ω 2 3 (Typ) (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 8A Col

9.9. 2sd2107.pdf Size:32K _hitachi

SD210DE
SD210DE

2SD2107 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 4A Collector peak current IC(peak) 8A Collector power d

9.10. 2sd2106.pdf Size:35K _hitachi

SD210DE
SD210DE

2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 kΩ 200 Ω 2 3 (Typ) (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 6A Colle

9.11. 2sd2102.pdf Size:335K _hitachi

SD210DE
SD210DE

 2SD2102 Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance θ ( ° C/W)

9.12. 2sd2101.pdf Size:35K _hitachi

SD210DE
SD210DE

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 3 kΩ 150 Ω 3 (Typ) (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7V Collector current IC 10 A Co

9.13. 2sd2108.pdf Size:351K _hitachi

SD210DE
SD210DE

 2SD2108 Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance θ ( ° C/W)

9.14. sd2100.pdf Size:26K _calogic

SD210DE
SD210DE

N-Channel Depletion Mode Lateral DMOS FET LLC SD2100 / SST2100 FEATURES DESCRIPTION ON • Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t 1.0ns The SD2100/SST2100 is a depletion mode DMOS lateral FET • rss • Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c 2pf that provides ultra high speed switching with very low • • Low R . . . . . . .

9.15. 2sd2101.pdf Size:103K _jmnic

SD210DE
SD210DE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION ·With TO-220F package ·DARLINGTON APPLICATIONS · Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

9.16. 2sd2100.pdf Size:1046K _kexin

SD210DE
SD210DE

SMD Type Transistors NPN Transistors 2SD2100 1.70 0.1 ■ Features ● Low saturation voltage Collector ● Large current cappacity 0.42 0.1 ● Complementary to 2SB1397 0.46 0.1 Base 1.Base RBE 2.Collector 3.Emitter Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt

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