SD5002N MOSFET. Datasheet pdf. Equivalent
Type Designator: SD5002N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 85 °C
trⓘ - Rise Time: 0.8 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 70 Ohm
Package: DIP-16
SD5002N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SD5002N Datasheet (PDF)
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High-Speed DMOS Quad FETAnalog Switch ArraysLLCSD5000 / SD5001 / SD5002SD5400 / SD5401 / SD5402FEATURES DESCRIPTION Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec The SD5000 Series are monolithic arrays of four bidirectional, Low On Resistance high performance analog switches manufactured with Low Insertion Loss implanted high-speed, high
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SD5000RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONSPRELIMINARY DATA.GOLD METALLIZATION.EMITTER SITE BALLASTING.INTERNAL INPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC PACKAGE.COMMON EMITTER CONFIGURATION.P 1.5 W MIN. WITH 9.5 dB GAINOUT =.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD5000 S10A015PIN CONNECTIONDESCRIPTIONThe SD5000 is a NPN
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