All MOSFET. SEFM150 Datasheet

 

SEFM150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SEFM150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-254

 SEFM150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SEFM150 Datasheet (PDF)

 ..1. Size:215K  semitronics
 sefm150.pdf

SEFM150 SEFM150

SEMITRONICS CORP. SEFM150 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ceramic Eyelets MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVG094R1NSTR

 

 
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