All MOSFET. SEFM250 Datasheet

 

SEFM250 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SEFM250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-254

 SEFM250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SEFM250 Datasheet (PDF)

 ..1. Size:43K  semitronics
 sefm250.pdf

SEFM250 SEFM250

SEMITRONICS CORP. SEFM250 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ceramic Eyelets MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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